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Anisotropy of Optical Characteristics of Low-dimensional and Bulk Many-Valley Semiconductors

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Devices Based on Low-Dimensional Semiconductor Structures

Part of the book series: NATO ASI Series ((ASHT,volume 14))

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Abstract

Many - valley cubic semiconductors are optically isotropic crystals in near and medium IR range of spectrum. However, many - valley structure of energy bands gives rise to a number of peculiarities of optical characteristics. In this work it is shown theoretically tuperlattices depends on a light polarization. We also report about experimental observation of self - induced birefringence of intense IR light (C02 laser radiation) in bulk crystals of n - Ge.

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References

  • l. Proceedings of 22nd International Conference on The Physics of Semiconductors, Vancouver, Canada, 1994, V. l, p.26l-265

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© 1996 Kluwer Academic Publishers

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Svizhenko, A., Vasetskii, V., Poroshin, V., Sarbey, O., Gumenjuk-Sychevskaya, Z., Sizov, F. (1996). Anisotropy of Optical Characteristics of Low-dimensional and Bulk Many-Valley Semiconductors. In: Balkanski, M. (eds) Devices Based on Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 14. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0289-3_11

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  • DOI: https://doi.org/10.1007/978-94-009-0289-3_11

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-6615-0

  • Online ISBN: 978-94-009-0289-3

  • eBook Packages: Springer Book Archive

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