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Photoinduced Charge Transfer Processes in Semiconductor Heterostructures. Capped vs. Coupled Systems

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Part of the book series: NATO ASI Series ((ASHT,volume 12))

Abstract

By coupling or capping a metal oxide nanocrystallite with one or more semiconductors it is possible to design semiconductor heterostructures that are potentially useful in microelectronics or molecular devices. Photoinduced charge transfer processes in multicomponent semiconductor particulate systems can provide valuable information for improving the efficiency of charge separation. We have now synthesized a variety of semiconductor heterostructures with coupled and capped geometries. The charge transfer processes in metal oxide nanostructures of two different geometries have been investigated with nanosecond and picosecond laser flash photolysis. The geometry of these heterostructures has been found to control the interfacial charge transfer or charge collection efficiencies. The photoelectrochemical properties of capped and coupled semiconductor systems have also been made by preparing nanocrystalline thin films of these materials.

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© 1996 Kluwer Academic Publishers

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Kamat, P.V., Bedja, I., Vinodgopal, K. (1996). Photoinduced Charge Transfer Processes in Semiconductor Heterostructures. Capped vs. Coupled Systems. In: Pelizzetti, E. (eds) Fine Particles Science and Technology. NATO ASI Series, vol 12. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0259-6_23

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  • DOI: https://doi.org/10.1007/978-94-009-0259-6_23

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-4047-8

  • Online ISBN: 978-94-009-0259-6

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