Abstract
In this final Chapter, a high level summary of the main results presented in the previous Chapters is given. Perspectives for future studies of similar technologies are also outlined.
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J. Franco, B. Kaczer, A. Stesmans, V.V. Afanas’ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, G. Groeseneken, Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETS, IEEE Semiconductor Interface Specialists Conference (SISC), 2009
J. Franco, B. Kaczer, M. Cho, G. Eneman, T. Grasser and G. Groeseneken, Improvements of NBTI reliability in SiGe p-FETs, in IEEE Proceedings of International Reliability Physics Symposium (IRPS), pp. 1082–1085, 2010
J. Franco, G. Eneman, B. Kaczer, J. Mitard, B. De Jaeger, G. Groeseneken, Impact of halo implant on hot carrier reliability of germanium pMOSFETs, Workshop on Dielectrics in Microelectronics (WoDiM), 2010
J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas’ev, T. Kauerauf, Ph.J. Roussel,M. Toledano-Luque, M. Cho,R. Degraeve, T. Grasser, L.-Å. Ragnarsson, L. Witters, J. Tseng S. Takeoka, W.- E. Wang, T.Y. Hoffmann, G. Groeseneken, 6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): meeting the NBTI lifetime target at ultra-thin EOT, in IEEE Proceedings of International Electron Device Meeting (IEDM), pp. 4.1.1–4.1.4, 2010
J. Franco, B. Kaczer, J. Mitard, G. Eneman, Ph. J. Roussel, F. Crupi, T. Grasser, L. Witters, T.Y. Hoffmann, G. Groeseneken, in Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs, IEEE Semiconductor Interface Specialists Conference (SISC), 2010
J. Franco, B. Kaczer, G. Eneman, F. Crupi, Ph. J. Roussel, M. Cho, T. Grasser, J. Mitard, L. Witters, T.Y. Hoffmann, G. Groeseneken, On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs, in IEEE Proceedings of International Reliability Physics Symposium (IRPS), pp. 6A.4.1–4.6, 2011
J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, P. Hehenberger, T. Grasser, J. Mitard, G. Eneman, L. Witters, T.Y. Hoffmann, G. Groeseneken, in On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs, Conference on Insulating Films on Semiconductor (INFOS), 2011
J. Franco, B. Kaczer, G. Eneman, Ph.J. Roussel, T. Grasser, J. Mitard, L.-Å. Ragnarsson, M. Cho, L. Witters, T. Chiarella,M. Togo, W.-E Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken, Superior NBTI reliability of SiGe channel pMOSFETs: replacement gate, FinFETs, and impact of body bias, in IEEE Proceedings of International Electron Device Meeting (IEDM), pp. 18.5.1–18.5.4, 2011
J. Franco, B. Kaczer, M. Toledano-Luque, P. J. Roussel, L.-Å. Ragnarsson, G. Eneman, T. Grasser, G. Groeseneken, Impact of body bias on nanoscaled MOSFETs with individual trapped gate oxide charges, IEEE Semiconductor Interface Specialists Conference (SISC), 2011
J. Franco, B. Kaczer, M. Toledano-Luque, Ph.J. Roussel, T. Grasser, J. Mitard, L.-Å. Ragnarsson, L. Witters, T. Chiarella, M. Togo, W.-E Wang, N. Horiguchi, M.F. Bukhori, A. Asenov, G. Groeseneken, Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs, in IEEE Proceedings of International Reliability Physics Symposium (IRPS), pp. 5A.4.1–6, 2012
J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, P.J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken, Superior reliability and reduced time-dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications, Invited Contribution, in IEEE Proceedings of International Conference on IC Design and Technology (ICICDT), 2012
J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, P. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken, Reliability of SiGe channel MOS, Invited Contribution, in Proceedings of the Electrochemical Society Fall Meeting in ECS Trans., vol. 50, 9, (2012)
J. Franco, B. Kaczer, M. Toledano-Luque, P. J. Roussel, B. Schwarz, M. Bina, M. Waltl, T. Grasser, G. Groeseneken, Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias, in IEEE Proceedings of International Reliability Physics Symposium (IRPS), 2013
J. Franco, B. Kaczer, M. Toledano-Luque, P. J. Roussel, B. Schwarz, M. Bina, M. Waltl, T. Grasser, G. Groeseneken, Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body Bias, in IEEE Proceedings of International Reliability Physics Symposium (IRPS), 2013
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Franco, J., Kaczer, B., Groeseneken, G. (2014). Conclusions and Perspectives. In: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications. Springer Series in Advanced Microelectronics, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-7663-0_7
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DOI: https://doi.org/10.1007/978-94-007-7663-0_7
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