Abstract
In this introductory chapter we review the latest trends in CMOS technology scaling, focusing in particular on the transition from the conventional geometrical scaling (evolutionary era) to the ultimate scaling by engineering and innovation (revolutionary era). We outline the main advantages offered by high mobility channel technologies which are currently under development for possible implementation in future CMOS nodes. We discuss how ultimate device scaling and stochastic device-to-device variability in nanoscale technologies pose significant reliability constraints.
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Franco, J., Kaczer, B., Groeseneken, G. (2014). Introduction. In: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications. Springer Series in Advanced Microelectronics, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-7663-0_1
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DOI: https://doi.org/10.1007/978-94-007-7663-0_1
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