Abstract
The breakdown voltages for double gate MOSFET have been analyzed using nonlinear doping profiles in channel by applying 2D analytical solutions for potential distribution. Since the potential distributions based on Poisson equation show the change of potential distribution for width direction is trivial for double gate MOSFET, 2D analysis is reasonable. One of the short channel effects is low breakdown voltage. The breakdown voltages for double gate MOSFET have been investigateed for the change of channel length, channel thickness, gate oxide thickness and doping profile with Gaussian distribution as nonlinear function, using Fulop’s avalanche breakdown model. As a result, we know the breakdown voltages have greatly changed for device dimension and doping profile.
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Jung, H., Cheong, D. (2013). 2D Analysis of Breakdown Voltages for Device Dimension of Double Gate MOSFET Using Nonlinear Doping Profile. In: Jung, HK., Kim, J., Sahama, T., Yang, CH. (eds) Future Information Communication Technology and Applications. Lecture Notes in Electrical Engineering, vol 235. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6516-0_44
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DOI: https://doi.org/10.1007/978-94-007-6516-0_44
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