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Structural Defects on the Electronic Transport Properties of Carbon-Based Nanostructures

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Topological Modelling of Nanostructures and Extended Systems

Part of the book series: Carbon Materials: Chemistry and Physics ((CMCP,volume 7))

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Abstract

Carbon-based materials are expected to be used as the components of nanodevices in the future. The fabrication and characterization of carbon-based materials with unique electronic and transport properties in terms of atomic engineering at nanoscale have been experimentally realized. However, the occurrence of various defects is widely regarded to be inevitable during the chemically synthesized and lithographically patterned approaches. Moreover, scientist can now make use of electron or ion beams to tailor the atomic structure of low-dimensional material with high precision to obtain particular characteristics. Enormous experimental and theoretical works are dedicated to the understanding of the role of defects on nanomaterials, with special emphasis on carbon-based nanosystems. In this chapter, we report recent advances in the area and present multiscale modeling to investigate the influences of structural defects, including vacancy, substitutional doping, topological defects, Stone–Wales defects, as well as composite defects, on the electronic transport properties of carbon-based low-dimensional materials.

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Acknowledgements

The authors thank Prof. K.-L. Yao and Dr. Y. Xu for the fruitful discussion. We also acknowledge technical assistance from Dr. T. Markussen and M.A. Kuroda. Extensive calculations are performed in the MAC OS X Turing cluster. This work is supported by NSF of China Grant No. 11047176 and the Research Foundation of Education Bureau of Hubei Province of China under Grant Nos. Q20111305, B20101303, and T201204.

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Authors and Affiliations

  1. College of Physical Science and Technology, Yangtze University, Jingzhou, Hubei, 434023, China

    Hui Zeng & Jun Zhao

  2. College of Optoelectronic Information, Chongqing Institute of Technology, Chongqing, 400054, China

    Jianwei Wei

  3. Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA

    Jean-Pierre Leburton

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  1. Hui Zeng
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  2. Jun Zhao
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  3. Jianwei Wei
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  4. Jean-Pierre Leburton
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Correspondence to Jun Zhao .

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Editors and Affiliations

  1. , Department of Mathematics, University of Kashan, Kashan, Iran

    Ali Reza Ashrafi

  2. , Department of Materials Science, Tor Vergata University, Rome, Italy

    Franco Cataldo

  3. , Department of Mathematics, Tarbiat Modares University, Tehran, Iran

    Ali Iranmanesh

  4. Actinium Chemical Research, Rome, Italy

    Ottorino Ori

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Zeng, H., Zhao, J., Wei, J., Leburton, JP. (2013). Structural Defects on the Electronic Transport Properties of Carbon-Based Nanostructures. In: Ashrafi, A., Cataldo, F., Iranmanesh, A., Ori, O. (eds) Topological Modelling of Nanostructures and Extended Systems. Carbon Materials: Chemistry and Physics, vol 7. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6413-2_3

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