Summary and Limiting Factors of PECCS

  • Seongil ImEmail author
  • Youn-Gyoung Chang
  • Jae Kim
Part of the SpringerBriefs in Physics book series (SpringerBriefs in Physics)


So far, through the previous 5 chapters, we have introduced the mechanisms and applications of our photo-electric probing methodology, PECCS to quantitatively measure the interfacial trap DOS of organic, oxide, and nanostructure channel FETs. In the case of p- and n-channel organic FETs, the PECCS plot demonstrates the interface trap DOS peaks and HOMO–LUMO peaks as well, while in the polycrystalline ZnO and amorphous InGaZnO TFTs electron trap DOS profiles were shown below their respective bandgaps (~3.2 eV). Nanowire ZnO FET displays quite unstable behavior during the initial gate bias sweeps for PECCS, showing a large amount of fifth shift from green illumination of 2.3 eV on due to high density traps at the single crystalline ZnO NW/oxide dielectric interface.


Gate Bias Dielectric Interface Unstable Behavior Bias Stress Sweep Process 
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© The Author(s) 2013

Authors and Affiliations

  1. 1.Institute of Physics and Applied PhysicsYonsei UniversitySeoulRepublic of Korea (South Korea)
  2. 2.Institute of Physics and Applied PhysicsYonsei UniversitySeoulRepublic of Korea (South Korea)
  3. 3.Institute of Physics and Applied PhysicsYonsei UniversityPaju-siRepublic of Korea (South Korea)

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