PECCS Measurements in Nanostructure FETs

  • Seongil ImEmail author
  • Youn-Gyoung Chang
  • Jae Kim
Part of the SpringerBriefs in Physics book series (SpringerBriefs in Physics)


Interfacial trap densities or DOS profiles in nano structure FETs with nano wire (NW) or nano sheet active layer have hardly been investigated due to such difficulties that the measurements would face: how to fabricate and probe the nano FETs. Fortunately, our PECCS using an optical fiber is an appropriate and probably the only method to probe for the nano materials and nano devices. So, in this special section we introduce our PECCS-adopting trap DOS results and band gap-determining study from top-gate ZnO NW FETs and MoS2 nano sheet FETs [1], respectively.


Nanosheet Nanowire ZnO Nano FET PECCS Interfacial trap DOS 


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Copyright information

© The Author(s) 2013

Authors and Affiliations

  1. 1.Institute of Physics and Applied PhysicsYonsei UniversitySeoulRepublic of Korea (South Korea)
  2. 2.Institute of Physics and Applied PhysicsYonsei UniversitySeoulRepublic of Korea (South Korea)
  3. 3.Institute of Physics and Applied PhysicsYonsei UniversityPaju-siRepublic of Korea (South Korea)

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