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Instrumentations for PECCS

  • Seongil ImEmail author
  • Youn-Gyoung Chang
  • Jae Kim
Chapter
  • 698 Downloads
Part of the SpringerBriefs in Physics book series (SpringerBriefs in Physics)

Abstract

As mentioned in previous chapter, there have been great efforts to study the trap or midgap states in real devices and semiconducting thin-films so far. Photoluminescence (PL) is a direct method to observe deep-level defects in semiconductors but can not be used on a working device with interfaces [1, 2]. Deep-level transient spectroscopy (DLTS) and gate-bias stress techniques may be used with working TFT devices to characterize the interface trap states, utilizing thermal and electrical energies, respectively [2, 3, 4, 5, 6, 7]. However, DLTS has its own limit due to poor resolution on unpractical devices while deep-level in DLTS is actually not too deep because of the limit of temperature elevation. Gate bias stress technique is only an industrial test which can not resolve the density-of-states in trap energy level. In this chapter we thus display the instrumentation of photo-excited charge-collection spectroscopy (PECCS) on a working TFT device. [8].

Keywords

Deep-level defects PECCS TFT Monochromator Photon-probe Trap DOS 

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Copyright information

© The Author(s) 2013

Authors and Affiliations

  1. 1.Institute of Physics and Applied PhysicsYonsei UniversitySeoulRepublic of Korea (South Korea)
  2. 2.Institute of Physics and Applied PhysicsYonsei UniversitySeoulRepublic of Korea (South Korea)
  3. 3.Institute of Physics and Applied PhysicsYonsei UniversityPaju-siRepublic of Korea (South Korea)

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