Abstract
Important performance factors and basic device physics of organic or inorganic-channel thin-film transistors (TFTs) are addressed before introducing the photo-excited charge collection spectroscopy (PECCS), so that systematic and in-depth understanding on the device stability issues may be naturally drawn in focus. Device architecture, device physics, and general stability issues in TFT (or field-effect transistor) are thus introduced in the initial sections, and in the last section our photon-probing technique is explained along with its own device physics.
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References
Bartic, C., et al.: Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors. Org. Electron. 3, 65–72 (2002)
Carcia, P.F., et al.: A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics. J. Appl. Phys. 102, 074512 (2007)
Sato, A., et al.: Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor. Appl. Phys. Lett. 94, 133502 (2009)
Zhang, H., Yamazaki, S.: Thin film transistor. US. Patent 5,313,075, 17 May 1994
Muller, R.S., Kamins, T.I.: Device Electronics for Integrated Circuits, 3rd edn. Chapter 9. Wiley, New York (2003)
Shur M. et al.: Physics of amorphous silicon-based alloy field-effect transistors. J. Appl. Phys. 55, 3831–3842 (1984)
Shur, M., et al.: A new analytic model for amorphous silicon thin-film transistors. J. Appl. Phys. 66, 3371–3380 (1989)
Im, H.-K. et al.: Threshold voltage of thin-film silicon-on-insulator MOSFETs. IEEE Trans. Elec. Dev. ED-30, 1244–1251 (1983)
Ayres, J.R.: Characterization of trapping states in polycrystalline-silicon thin-film transistors by deep-level transient spectroscopy. J. Appl. Phys. 84, 1787 (1993)
Kagan, C.R., Andry, P.: Thin-Film Transistors. Chapter 4, Marcel Dekker, Inc., New York (2003)
Fleetwood, D.M., et al.: Estimating oxide-trap, interface-trap, and border-trap charge densities in metal-oxide-semiconductor transistors. Appl. Phys. Lett. 64, 1965–1967 (1994)
Aoki, Hitoshi: Dynamic characterization of a-Si TFT-LCD pixels. IEEE Trans. Elec. Dev. 43, 31–39 (1996)
Lecomber, P.G., et al.: Amorphous-silicon field-effect device and possible application. Electron. Lett. 15, 179–181 (1979)
Rolland, A., et al.: Electrical properties of amorphous silicon transistors and MIS-Devices: Comparative study of top nitride and bottom nitride configurations. J. Electrochem. Soc. 140, 3679–3683 (1993)
Muller, R.S., Kamins, T.I., Chan, M.: Device Electronics for Integrated Circuits, 3rd edn, pp. 443–444, 405–409, 397. Wiley, New York, 2003
Hwang, D.K. et. al.: Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics. Appl. Phys. Lett. 92, 013304 (2008)
Hwang, D.K., et al.: Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers. J. Electrochem. Soc. 153, G23 (2006)
Kimizuka, N. et al.: The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling. 1999 Symposium on VLSI Technology Digest of Technical Paper, pp. 73, 6-B1, (1999)
Lee, J.-M., et al.: Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors. Appl. Phys. Lett. 93, 093504 (2008)
Suresh, A., et al.: Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. Appl. Phys. Lett. 92, 033502 (2008)
Powell, M.J., et al.: Time and temperature dependence of instability mechanism in amorphous silicon thin-film transistors. Appl. Phys. Lett. 54, 1323–1325 (1989)
Chang, Y.-G. et al.: DC versus pulse-type negative bias stress effects on the instability of amorphous InGaZnO transistors under light illumination. IEEE Elec. Dev. Lett. 32, 1704–1706 (2011)
McMahon, T.J. et al.: Photoconductivity and light-induced change in a-Si:H. Phys. Rev. B, 34, 2475–2481 (1986)
Ryu, Byungki, et al.: O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Appl. Phys. Lett. 97, 022108 (2010)
Park, J.H. et al.: Stability-improved organic n-channel thin-film transistors with nm-thin hydrophobic polymer-coated high-k dielectrics. Phys. Chem. Chem. Phys. 14, 14202–14206 (2012)
Lang, D.V.: Deep-level transient spectroscopy: a new method to characterize traps in semiconductors. J. Appl. Phys. 45, 3023–3032 (1974)
Peter, J., Brown, et al.: Optical spectroscopy of field-induced charge in self-organized high mobility Poly(3-hexylthiophene). Phys. Rev. B 63, 125204 (2001)
Lee, K., et al.: Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy. Adv. Mater. 22, 3260–3265 (2010)
Lee, K. et. al.: Density of trap states measured by photon probe into ZnO based thin-film transistors. Appl. Phys. Lett. 97, 082110 (2010)
Lee, K., et al.: Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors. J. Mater. Chem. 20, 2659–2663 (2010)
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Im, S., Chang, YG., Kim, J. (2013). Device Stability and Photo-Excited Charge-Collection Spectroscopy. In: Photo-Excited Charge Collection Spectroscopy. SpringerBriefs in Physics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6392-0_1
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DOI: https://doi.org/10.1007/978-94-007-6392-0_1
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