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Investigation of Quantum Well Transistors for Scaled Technologies

  • Geert Hellings
  • Kristin De Meyer
Chapter
  • 1.4k Downloads
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 42)

Abstract

Chapter 5 discusses the scaling issues in bulk silicon and bulk germanium MOSFET technologies. Afterwards, Heterostructure confinement is investigated as a means to enhance MOSFET scalability. The Implant-Free Quantum Well FET is introduced and its performance analyzed using TCAD simulations.

Keywords

Quantum Well Gate Length High Electron Mobility Transistor Short Channel Effect Transistor Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Geert Hellings
    • 1
  • Kristin De Meyer
    • 1
  1. 1.CMOS Technology DepartmentIMECLeuvenBelgium

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