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Electrical TCAD Simulations and Modeling in Germanium

  • Geert Hellings
  • Kristin De Meyer
Chapter
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 42)

Abstract

Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.

Keywords

Gate Length Interface Trap Minority Carrier Lifetime Subthreshold Slope Transversal Electric Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Geert Hellings
    • 1
  • Kristin De Meyer
    • 1
  1. 1.CMOS Technology DepartmentIMECLeuvenBelgium

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