Electrical TCAD Simulations and Modeling in Germanium

  • Geert Hellings
  • Kristin De Meyer
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 42)


Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.


Gate Length Interface Trap Minority Carrier Lifetime Subthreshold Slope Transversal Electric Field 
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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Geert Hellings
    • 1
  • Kristin De Meyer
    • 1
  1. 1.CMOS Technology DepartmentIMECLeuvenBelgium

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