Abstract
Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
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F. Bellenger, M. Houssa, A. Delabie, V. Afanasiev, T. Conard, M. Caymax, M. Meuris, K. De Meyer, M.M. Heyns, Passivation of Ge(100)/GeO2/high-κ gate stacks using thermal oxide treatments. J. Electrochem. Soc. 155(2), G33–G38 (2008)
D.M. Caughey, R.E. Thomas, Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE 55(12), 2192–2193 (1967)
R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, M. Radosavljevic, Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Electron Device Lett. 4(2), 153–158 (2005)
C.-O. Chui, H. Kim, D. Chi, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, A sub-400 deg°C germanium MOSFET technology with high-κ dielectric and metal gate, in International Electron Devices Meeting (2002), pp. 437–440
B. De Jaeger, R. Bonzom, F. Leys, J. Steenbergen, G. Winderickx, E. Van Moorhem, G. Raskin, F. Letertre, T. Billon, M. Meuris, M. Heyns, Optimisation of a thin epitaxial Si layer as a Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-insulator substrates. Microelectron. Eng. 80, 26–29 (2005)
G. Du, X.Y. Liu, Z.-L. Xia, Y.K. Wang, D.Q. Hou, J.F. Kang, R.Q. Han, Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale. Jpn. J. Appl. Phys. 44(4B), 2195–2197 (2005)
G. Eneman, M. Wiot, A. Brugere, O.S.I. Casain, S. Sonde, D.P. Brunco, B. De Jaeger, A. Satta, G. Hellings, K. De Meyer, C. Claeys, M. Meuris, M.M. Heyns, E. Simoen, Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions. IEEE Trans. Electron Devices 55(9), 2287–2296 (2008)
G. Eneman, B. De Jaeger, E. Simoen, D.P. Brunco, G. Hellings, J. Mitard, K. De Meyer, M. Meuris, M.M. Heyns, Quantification of drain extension leakage in a scaled bulk germanium pMOS technology. IEEE Trans. Electron Devices 56(12), 3115–3122 (2009)
V.I. Fistul, M.I. Iglitsyn, E.M. Omelyanovskii, Mobility of electrons in germanium strongly doped with arsenic. Sov. Phys., Solid State 4(4), 784–785 (1962)
J.G. Fossum, D.S. Lee, A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon. Solid-State Electron. 25, 741–747 (1982)
E. Gaubas, M. Bauza, A. Uleckas, J. Vanhellemont, Carrier lifetime studies in Ge using microwave and infrared light techniques. Mater. Sci. Semicond. Process. 9(4–5), 781–787 (2006). Also in Proceedings of Symposium T E-MRS 2006 Spring Meeting on Germanium Based Semiconductors from Materials to Devices
O.A. Golikova, B.Ya. Moizhes, L.S. Stil’bans, Hole mobility of germanium as a function of concentration and temperature. Sov. Phys., Solid State 3(10), 2259–2265 (1962)
G. Hellings, G. Eneman, R. Krom, B. De Jaeger, J. Mitard, A. De Keersgieter, T. Hoffmann, M. Meuris, K. De Meyer, Electrical TCAD simulations of a germanium pMOSFET technology. IEEE Trans. Electron Devices 57(10), 2539–2546 (2010)
G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, A new recombination model for device simulation including tunneling. IEEE Trans. Electron Devices 39(2), 331–338 (1992)
R.D. Larrabee, Drift velocity saturation in p-type germanium. J. Appl. Phys. 30(6), 857–859 (1959)
C. Lombardi, S. Manzini, A. Saporito, M. Vanzi, A physically based mobility model for numerical simulation of nonplanar devices. IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 7(11), 1164–1171 (1988)
K. Martens, J. Mitard, B. De Jaeger, M. Meuris, H. Maes, G. Groeseneken, F. Minucci, F. Crupi, Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs, in Solid-State Device Research Conference (2008), pp. 138–141
K. Martens, C. On Chui, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. Heyns, T. Krishnamohan, K. Saraswat, H.E. Maes, G. Groeseneken, On the correct extraction of interface trap density of mos devices with high-mobility semiconductor substrates. IEEE Trans. Electron Devices 55(2), 547–556 (2008)
G. Masetti, M. Severi, S. Solmi, Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon. IEEE Trans. Electron Devices 30(7), 764–769 (1983)
J. Mitard, K. Martens, B. De Jaeger, J. Franco, C. Shea, C. Plourde, F. Leys, R. Loo, G. Hellings, G. Eneman, W. Wang, V. Lin, B. Kaczer, K. De Meyer, T. Hoffmann, S. De Gendt, M. Caymax, M. Meuris, M. Heyns, Impact of Epi-Si growth temperature on Ge-pFET performance, in 39th European Solid-State Device Research Conference (ESSDERC) (2009), pp. 411–414
J. Mitard, C. Shea, B. De Jaeger, A. Pristera, G. Wang, M. Houssa, G. Eneman, G. Hellings, W.E. Wang, J.C. Lin, F.E. Leys, R. Loo, G. Winderickx, E. Vrancken, A. Stesmans, K. De Meyer, M. Caymax, L. Pantisano, M. Meuris, M. Heyns, Impact of EOT scaling down to 0.85nm on 70nm GE-pFETs technology with STI, in Symposium on VLSI Technology (2009), pp. 82–83
E.J. Ryder, Mobility of holes and electrons in high electric fields. Phys. Rev. 90(5), 766–769 (1953)
A. Schenk, Rigorous theory and simplified model of the band-to-band tunneling in silicon. Solid-State Electron. 36(1), 19–34 (1993)
Sentaurus sdevice, ver. D-2010.03. Available from Synopsys inc. (2010)
Sentaurus sprocess, ver. D-2010.03. Available from Synopsys inc. (2010)
S.M. Sze, Physics of Semiconductor Devices (Wiley, Hoboken, 1981)
S. Takagi, A. Toriumi, M. Iwase, H. Tango, On the universality of inversion layer mobility in Si MOSFET’s: Part I. Effects of substrate impurity concentration. IEEE Trans. Electron Devices 41(12), 2357–2362 (1994)
N. Taoka, K. Ikeda, Y. Yamashita, N. Sugiyama, S. Takagi, Effects of ambient conditions in thermal treatment for Ge(0 0 1) surfaces on Ge–MIS interface properties. Semicond. Sci. Technol. 22(1), S114 (2007)
N. Taoka, M. Harada, Y. Yamashita, T. Yamamoto, N. Sugiyama, S.-I. Takagi, Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility. Appl. Phys. Lett. 92(11), 113511 (2008)
L. Trojman, L. Pantisano, M. Dehan, I. Ferain, S. Severi, H.E. Maes, G. Groeseneken, Velocity and mobility investigation in 1-nm-EOT HfSiON on Si (110) and (100)—Does the dielectric quality matter? IEEE Trans. Electron Devices 56(12), 3009–3017 (2009)
Y. Tsividis, Operation and Modeling of the MOS Transistor (Oxford University Press, Oxford, 1999)
M.S. Tyagi, R. Van Overstraeten, Minority carrier recombination in heavily-doped silicon. Solid-State Electron. 26, 577–597 (1983)
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Appendix
Appendix
4.1.1 A.1 TCAD Model Parameters
This appendix contains the model parameters used in this work. Each time, both the name of physical phenomenon and the name of the parameter set is given (e.g. SRH-recombination is modeled using the Scharfetter dataset in Sentaurus Device) together with the default silicon values. If different values apply for electrons and holes, both values are given in this order, separated by a comma. Note that the definition of these parameters below applies solely to their specific implementation in Sentaurus Device. The literature references on which these models are based may use slightly different definitions. For this reason, the parameters below are not included in the general list of symbols of this book.
4.1.2 A.2 Recombination
SRH-recombination (Scharfetter)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
τ min | s | 0, 0 | 0, 0 |
τ max | s | 1×10−5, 3×10−6 | 4×10−5, 4×10−5 |
N ref | cm−3 | 1016, 1016 | 1014, 1014 |
γ | – | 1, 1 | 0.85, 0.85 |
T α | – | −1.5, −1.5 | −1.5, −1.5 |
T coeff | – | 2.55, 2.55 | 2.55, 2.55 |
E trap | eV | 0.0, 0.0 | 0.0, 0.0 |
Note (1)—E trap refers to the SRH reference trap energy w.r.t mid-bandgap (e.g. E trap =0.0 corresponds to E V +0.33 eV in Germanium) | |||
Note (2)—τ max was taken from [47] and then decreased slightly to correspond with the leakage measurements on our Ge p+/n diodes | |||
Note (3)—The temperature dependence for Ge was not investigated. Instead, Si defaults are still used. Further research is required for this dependency |
TAT (HurckxTrapAssistedTunneling)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
m t | – | 0.5, 0.5 | 0.12, 0.34 |
BTBT (Band2BandTunneling)
Parameter | Units | Si | Ge |
---|---|---|---|
A | cm s−1 V−2 | 8.977×1020 | 8.977×1020 |
B | eV−3/2 V cm−1 | 2.147×107 | 1.6×107 |
4.1.3 A.3 Mobility
Phonon Scattering (ConstantMobility)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
μ max | cm2 V−1 s−1 | 1417, 470.5 | 3900, 1900 |
exponent | – | 2.5, 2.2 | 2.5, 2.2 |
Impurity Scattering (DopingDependence)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
μ min1 | cm2/Vs | 52.2, 44.9 | 60, 60 |
μ min2 | cm2/Vs | 52.2, 0.0 | 0, 0 |
μ 1 | cm2/Vs | 43.4, 29 | 20, 40 |
P c | cm−3 | 0, 9.23×1016 | 1017, 9.23×1016 |
C r | cm−3 | 9.68×1016, 2.23×1017 | 8×1016, 2×1017 |
C s | cm−3 | 3.34×1020, 6.10×1020 | 3.43×1020, 1020 |
α | – | 0.68, 0.719 | 0.55, 0.55 |
β | – | 2.0, 2.0 | 2.0, 2.0 |
High Lateral Field Mobility (HighFieldDependence)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
v sat0 | cm/s | 1.07×107, 8.37×106 | 8×106, 6×106 |
High Transversal Field Mobility (EnormalDependence (holes only))
Parameter | Units | Si | Ge |
---|---|---|---|
B | cm/s | 9.925×106 | 1.993×105 |
C | cm5/3 V−2/3 s−1 | 2.947×103 | 4.875×103 |
N 0 | cm−3 | 1 | 1 |
λ | – | 0.0317 | 0.0317 |
k | – | 1 | 1 |
δ | cm2/Vs | 2.0546×1014 | 1.705×1011 |
A | – | 2 | 1.5 |
α ⊥ | cm3 | 0 | 0 |
N 1 | cm−3 | 1 | 1 |
ν | – | 1 | 1 |
η | V2 cm−1 s−1 | 2.0546×1030 | 2.0546×1030 |
l crit | cm | 10−6 | 10−6 |
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Hellings, G., De Meyer, K. (2013). Electrical TCAD Simulations and Modeling in Germanium. In: High Mobility and Quantum Well Transistors. Springer Series in Advanced Microelectronics, vol 42. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6340-1_4
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