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TCAD Simulation and Modeling of Ion Implants in Germanium

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High Mobility and Quantum Well Transistors

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 42))

Abstract

Chapter 3 uses a TCAD process simulator to model dopant implants in germanium. The process simulator is then applied to design ion implant steps for a scaled L G =70 nm germanium pMOSFET technology.

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Authors and Affiliations

  1. CMOS Technology Department, IMEC, Leuven, Belgium

    Geert Hellings & Kristin De Meyer

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  1. Geert Hellings
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  2. Kristin De Meyer
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Appendix

Appendix

3.1.1 A.1 Calibrated Parameters for TaurusMC

This appendix contains the calibrated parameters for the Taurus Monte Carlo Ion Implant simulator (using sprocess syntax, [128]).

figure a
figure b
figure c

3.1.2 A.2 Model Parameters: Ion Implants into Crystalline Ge

Table 3.5 Model parameters for the analytical ion implant modeling (see Sect. 3.3.2)
Full size table

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Hellings, G., De Meyer, K. (2013). TCAD Simulation and Modeling of Ion Implants in Germanium. In: High Mobility and Quantum Well Transistors. Springer Series in Advanced Microelectronics, vol 42. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6340-1_3

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  • DOI: https://doi.org/10.1007/978-94-007-6340-1_3

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-007-6339-5

  • Online ISBN: 978-94-007-6340-1

  • eBook Packages: EngineeringEngineering (R0)

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