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TCAD Simulation and Modeling of Ion Implants in Germanium

  • Geert Hellings
  • Kristin De Meyer
Chapter
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 42)

Abstract

Chapter 3 uses a TCAD process simulator to model dopant implants in germanium. The process simulator is then applied to design ion implant steps for a scaled L G =70 nm germanium pMOSFET technology.

Keywords

Monte Carlo Spectroscopic Ellipsometry Short Channel Junction Leakage Energy Delay Product 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Geert Hellings
    • 1
  • Kristin De Meyer
    • 1
  1. 1.CMOS Technology DepartmentIMECLeuvenBelgium

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