Source/Drain Junctions in Germanium: Experimental Investigation

  • Geert Hellings
  • Kristin De Meyer
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 42)


Chapter 2 investigates the fabrication of shallow junctions in germanium experimentally, targeting application in a scaled germanium MOSFET technology.


Sheet Resistance Rapid Thermal Annealing Junction Depth Thread Dislocation Density Sheet Resistance Measurement 
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  1. 5.
    D.G. Ashworth, R. Oven, B. Mundin, Representation of ion implantation profiles by Pearson frequency distribution curves. J. Phys. D, Appl. Phys. 23(7), 870 (1990) ADSCrossRefGoogle Scholar
  2. 14.
    S. Brotzmann, H. Bracht, Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium. J. Appl. Phys. 103(3), 033508 (2008) ADSCrossRefGoogle Scholar
  3. 22.
    A. Chroneos, R.W. Grimes, B.P. Uberuaga, S. Brotzmann, H. Bracht, Vacancy-arsenic clusters in germanium. Appl. Phys. Lett. 91(19), 192106 (2007) ADSCrossRefGoogle Scholar
  4. 24.
    C.-O. Chui, L. Kulig, J. Moran, W. Tsai, K.C. Saraswat, Germanium n-type shallow junction activation dependences. Appl. Phys. Lett. 87(9), 091909 (2005) ADSCrossRefGoogle Scholar
  5. 25.
    T. Clarysse, D. Vanhaeren, I. Hoflijk, W. Vandervorst, Characterization of electrically active dopant profiles with the spreading resistance probe. Mater. Sci. Eng., R Rep. 47(5–6), 123–206 (2004) CrossRefGoogle Scholar
  6. 26.
    T. Clarysse, P. Eyben, T. Janssens, I. Hoflijk, D. Vanhaeren, A. Satta, M. Meuris, W. Vandervorst, J. Bogdanowicz, G. Raskin, Active dopant characterization methodology for germanium. J. Vac. Sci. Technol., B 24(1), 381–389 (2006) CrossRefGoogle Scholar
  7. 29.
    L. Csepregi, R. Kullen, J. Mayer, T. Sigmon, Regrowth kinetics of amorphous Ge layers created by 74Ge and 27Si implantation of Ge crystals. Solid State Commun. 21(11), 1109 (1977) CrossRefGoogle Scholar
  8. 34.
    J.M. Dorkel, Ph. Leturcq, Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level. Solid-State Electron. 24(9), 821–825 (1981) ADSCrossRefGoogle Scholar
  9. 36.
    R. Duffy, M. Shayesteh, M. White, J. Kearney, A.-M. Kelleher, The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization. Appl. Phys. Lett. 96(23), 231909 (2010) ADSCrossRefGoogle Scholar
  10. 44.
    V.I. Fistul, M.I. Iglitsyn, E.M. Omelyanovskii, Mobility of electrons in germanium strongly doped with arsenic. Sov. Phys., Solid State 4(4), 784–785 (1962) Google Scholar
  11. 49.
    J. Glassbrenner, G.A. Slack, Thermal conductivity of silicon and germanium from 3K to the melting point. Phys. Rev. 164(4A), 1058–1069 (1964) ADSCrossRefGoogle Scholar
  12. 50.
    O.A. Golikova, B.Ya. Moizhes, L.S. Stil’bans, Hole mobility of germanium as a function of concentration and temperature. Sov. Phys., Solid State 3(10), 2259–2265 (1962) Google Scholar
  13. 51.
    V. Heera, A. Mucklich, M. Posselt, M. Voelskow, C. Wundisch, B. Schmidt, R. Skrotzki, K.H. Heinig, T. Herrmannsdorfer, W. Skorupa, Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: structure and electrical activation. J. Appl. Phys. 107(5), 053508 (2010) ADSCrossRefGoogle Scholar
  14. 61.
    G. Hellings, E. Rosseel, T. Clarysse, D.H. Petersen, O. Hansen, P.F. Nielsen, E. Simoen, G. Eneman, B. De Jaeger, T. Hoffmann, K. De Meyer, W. Vandervorst, Systematic study of shallow junction formation on germanium substrates. Microelectron. Eng. 88(4), 347–350 (2011). Post-Si-CMOS electronic devices: the role of Ge and III-V materials CrossRefGoogle Scholar
  15. 65.
    D.P. Hickey, Z.L. Bryan, K.S. Stones, R.G. Elliman, E.E. Haller, Defects in Ge and Si caused by 1 MeV Si+ implantation. J. Vac. Sci. Technol., B 26(1), 425–429 (2008) CrossRefGoogle Scholar
  16. 68.
    J. Huang, N. Wu, Q. Zhang, C. Zhu, A.A.O. Tay, G. Chen, M. Hong, Germanium n+/p junction formation by laser thermal process. Appl. Phys. Lett. 87(17), 173507 (2005) ADSCrossRefGoogle Scholar
  17. 70.
    G. Impellizzeri, S. Mirabella, E. Bruno, A.M. Piro, M.G. Grimaldi, B activation and clustering in ion-implanted Ge. J. Appl. Phys. 105(6), 063533 (2009) ADSCrossRefGoogle Scholar
  18. 73.
    International Technology Roadmap for Semiconductors (ITRS). 2007 edition. Online:
  19. 74.
    International Technology Roadmap for Semiconductors (ITRS). 2009 edition. Online:
  20. 76.
    T. Janssens, C. Huyghebaert, D. Vanhaeren, G. Winderickx, A. Satta, M. Meuris, W. Vandervorst, Heavy ion implantation in Ge: dramatic radiation induced morphology in Ge. J. Vac. Sci. Technol., B 24(1), 510–514 (2006) CrossRefGoogle Scholar
  21. 77.
    B.C. Johnson, P. Gortmaker, J.C. McCallum, Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium. Phys. Rev. B 77(21), 214109 (2008) ADSCrossRefGoogle Scholar
  22. 88.
    S.S. Li, W.R. Thurder, The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon. Solid-State Electron. 20(7), 609–616 (1977) ADSCrossRefGoogle Scholar
  23. 98.
    S. Mirabella, G. Impellizzeri, A.M. Piro, E. Bruno, M.G. Grimaldi, Activation and carrier mobility in high fluence B implanted germanium. Appl. Phys. Lett. 92, 251909 (2008) ADSCrossRefGoogle Scholar
  24. 106.
    T. Noda, W. Vandervorst, S. Felch, V. Parihar, A. Cuperus, R. Mcintosh, C. Vrancken, E. Rosseel, H. Bender, B. Van Daele, M. Niwa, H. Umimoto, R. Schreutelkamp, P.P. Absil, M. Jurczak, K. De Meyer, S. Biesemans, T.Y. Hoffmann, Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach, in International Electron Devices Meeting (2007), pp. 955–958 Google Scholar
  25. 107.
    A.S. Okhotin, A.S. Pushkarskii, V.V. Gorbachev, Thermophysical Properties of Semiconductors (Atom, Moscow, 1972) Google Scholar
  26. 110.
    T.P. Pearsall, GaInAsP Alloy Semiconductors (Wiley, New York, 1982) Google Scholar
  27. 112.
    C.L. Petersen, T.M. Hansen, P. Böggild, A. Boisen, O. Hansen, T. Hassenkam, F. Grey, Scanning microscopic four-point conductivity probes. Sens. Actuators A, Phys. 96(1), 53–58 (2002) CrossRefGoogle Scholar
  28. 113.
    D.H. Petersen, O. Hansen, R. Lin, P.F. Nielsen, T. Clarysse, J. Goossens, E. Rosseel, W. Vandervorst, High precision micro-scale Hall effect characterization method using in-line micro four-point probes, in 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP 2008) (2008), pp. 251–256 CrossRefGoogle Scholar
  29. 114.
    D.H. Petersen, R. Lin, T.M. Hansen, E. Rosseel, W. Vandervorst, C. Markvardsen, D. Kjæandr, P.F. Nielsen, Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions. J. Vac. Sci. Technol., B Microelectron. Nanometer Struct. Process. Meas. Phenom. 26(1), 362–367 (2008) ADSCrossRefGoogle Scholar
  30. 117.
    M. Posselt, B. Schmidt, W. Anwand, R. Grötzschel, V. Heera, A. Mücklich, C. Wündisch, W. Skorupa, H. Hortenbach, S. Gennaro, M. Bersani, D. Giubertoni, A. Möller, H. Bracht, P implantation into preamorphized germanium and subsequent annealing: solid phase epitaxial regrowth, P diffusion, and activation, in International Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling (Insight 2007), vol. 26 (2008), pp. 430–434 Google Scholar
  31. 120.
    I. Riihimaki, A. Virtanen, S. Rinta-Anttila, P. Pusa, J. Raisanen, Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium. Appl. Phys. Lett. 91, 091922 (2007) ADSCrossRefGoogle Scholar
  32. 123.
    A. Satta, E. Simoen, T. Clarysse, T. Janssens, A. Benedetti, B. De Jaeger, M. Meuris, W. Vandervorst, Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium. Appl. Phys. Lett. 87, 172109 (2005) ADSCrossRefGoogle Scholar
  33. 124.
    A. Satta, T. Janssens, T. Clarysse, E. Simoen, M. Meuris, A. Benedetti, I. Hoflijk, B. De Jaeger, C. Demeurisse, W. Vandervorst, P implantation doping of ge: diffusion, activation, and recrystallization. J. Vac. Sci. Technol., B 24, 494–498 (2006) CrossRefGoogle Scholar
  34. 125.
    A. Satta, E. Simoen, T. Janssens, T. Clarysse, B. De Jaeger, A. Benedetti, I. Hoflijk, B. Brijs, M. Meuris, W. Vandervorst, Shallow junction Ion implantation in Ge and associated defect control. J. Electrochem. Soc. 153(3), G229–G233 (2006) CrossRefGoogle Scholar
  35. 128.
    Sentaurus sprocess, ver. D-2010.03. Available from Synopsys inc. (2010) Google Scholar
  36. 129.
    S. Severi, E. Augendre, S. Thirupapuliyur, K. Ahmed, S. Felch, V. Parihar, F. Nouri, T. Hoffman, T. Noda, B. O’Sullivan, J. Ramos, E. San Andres, L. Pantisano, A. De Keersgieter, R. Schreutelkamp, D. Jennings, S. Mahapatra, V. Moroz, K. De Meyer, P. Absil, M. Jurczak, S. Biesemans, Optimization of Sub-Melt Laser Anneal: Performance and Reliability, in International Electron Devices Meeting (2006), pp. 1–4 Google Scholar
  37. 131.
    E. Simoen, A. Brugere, A. Satta, A. Firrincieli, B. Van Daele, B. Brijs, O. Richard, J. Geypen, M. Meuris, W. Vandervorst, Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium. J. Appl. Phys. 105(9), 093538 (2009) ADSCrossRefGoogle Scholar
  38. 132.
    W. Skorupa, T. Gebel, R.A. Yankov, S. Paul, W. Lerch, D.F. Downey, E.A. Arevalo, Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing. J. Electrochem. Soc. 152, G436 (2005) CrossRefGoogle Scholar
  39. 134.
    N. Stolwijk, H. Bracht, Landolt-Börnstein Database, vol. III/33A (Springer, Berlin, 1998) Google Scholar
  40. 144.
    M.O. Thompson, G.J. Galvin, J.W. Mayer, P.S. Peercy, J.M. Poate, D.C. Jacobson, A.G. Cullis, N.G. Chew, Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation. Phys. Rev. Lett. 52(26), 2360–2363 (1984) ADSCrossRefGoogle Scholar
  41. 148.
    F.A. Trumbore, E.M. Porbansky, A.A. Tartaglia, Solid solubilities of aluminum and gallium in germanium. J. Phys. Chem. Solids 11, 239–245 (1959) ADSCrossRefGoogle Scholar
  42. 150.
    P. Tsouroutas, D. Tsoukalas, I. Zergioti, N. Cherkashin, A. Claverie, Diffusion and activation of phosphorus in germanium. Mater. Sci. Semicond. Process. 11(5–6), 372–377 (2008) CrossRefGoogle Scholar
  43. 152.
    S. Uppal, A.F.W. Willoughby, J.M. Bonar, A.G.R. Evans, N.E.B. Cowern, R. Morris, M.G. Dowsett, Diffusion of ion-implanted boron in germanium. J. Appl. Phys. 90(8), 4293–4295 (2001) ADSCrossRefGoogle Scholar
  44. 157.
    C. Wündisch, M. Posselt, B. Schmidt, V. Heera, T. Schumann, A. Mücklich, R. Grötzschel, W. Skorupa, T. Clarysse, E. Simoen, H. Hortenbach, Millisecond flash lamp annealing of shallow implanted layers in Ge. Appl. Phys. Lett. 95(25), 252107 (2009) ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Geert Hellings
    • 1
  • Kristin De Meyer
    • 1
  1. 1.CMOS Technology DepartmentIMECLeuvenBelgium

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