Abstract
This chapter introduces the model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of NAND flash memories is used to develop the methodology based on a benchmarking of NAND flash product innovations along the CMOS shrink roadmap. A performance and array model is introduced and a set of performance indicators characterizing architecture, cost and durability is defined.
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Richter, D. (2014). Memory Optimization: Key Performance Indicator Methodology. In: Flash Memories. Springer Series in Advanced Microelectronics, vol 40. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6082-0_6
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DOI: https://doi.org/10.1007/978-94-007-6082-0_6
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