Abstract
Using density-functional-theory simulations we study strain fields near vacancy-type defects in graphene. We demonstrate that the strain fields around these defects reach far into the unperturbed hexagonal network. As metal and other adatoms have a high affinity to the non-perfect and strained regions of graphene, they are therefore attracted by the reconstructed defects. This explains the intriguing behavior of metal adatoms on graphene reported in recent experiments (Cretu et al., Phys Rev Lett 105:196102, 2010). Finally, we analyze the electronic band structure of graphene with defects and show that some defects open a semiconductor gap in graphene, which may be important for carbon-based nanoelectronics.
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Acknowledgements
We thank F. Banhart for useful discussions. This work has been supported by the Academy of Finland through Centers of Excellence and other projects. The Finnish IT Center for Science has provided generous grants of computer time.
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Krasheninnikov, A.V. (2012). Strain Fields and Electronic Structure of Vacancy-Type Defects in Graphene from First-Principles Simulation. In: Shunin, Y., Kiv, A. (eds) Nanodevices and Nanomaterials for Ecological Security. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-4119-5_5
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DOI: https://doi.org/10.1007/978-94-007-4119-5_5
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