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Physics and Applications of Terahertz Radiation pp 77–100Cite as

Terahertz Plasma Field Effect Transistors

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Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 173))

Abstract

The channel of the field effect transistor can operate as a cavity for plasma waves. For the electrons with high enough mobility, the plasma waves can propagate in field effect transistors (FETs) channel leading to resonant Terahertz (THz) emission or detection. In the low mobility case, plasma oscillations are overdamped, but a plasma density perturbation can be induced by incoming THz radiation. This perturbation can lead to efficient broadband THz detection. We present an overview of the main experimental results concerning the plasma oscillations in field effect transistors for the generation and the detection of terahertz radiations.

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Acknowledgments

This work was partially supported by JST-ANR project WITH. We thank also CNRS guided GDR-I and GDR networks on Terahertz Science and Technology.

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Authors and Affiliations

  1. Laboratoire Charles Coulomb, Universite Montpellier 2 and CNRS, UMR 5221, GIS-TeraLab, F-34095, Montpellier, France

    W. Knap, D. Coquillat, N. Dyakonova, D. But & F. Teppe

  2. Institute of High Pressure Physics UNIPRESS PAN, 02-845, Warsaw, Poland

    W. Knap

  3. Research Institute of Electrical Communication, Tohoku University, Katahira, Aoba-Ku, Sendai, 980-8577, Japan

    T. Otsuji

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  1. W. Knap
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  2. D. Coquillat
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Correspondence to W. Knap .

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Editors and Affiliations

  1. Center for Materials and Microsystems Smart Optical Sensors & Interfaces, Fondazione Bruno Kessler, Povo, Italy

    Matteo Perenzoni

  2. School of Engineering, University of Glasgow, Glasgow, United Kingdom

    Douglas J. Paul

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Knap, W., Coquillat, D., Dyakonova, N., But, D., Otsuji, T., Teppe, F. (2014). Terahertz Plasma Field Effect Transistors. In: Perenzoni, M., Paul, D. (eds) Physics and Applications of Terahertz Radiation. Springer Series in Optical Sciences, vol 173. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-3837-9_3

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  • DOI: https://doi.org/10.1007/978-94-007-3837-9_3

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