Abstract
We describe the implementation of a zone plate microscope for atwavelength characterization of extreme ultraviolet masks. The microscope uses as illumination the 13.2 nm wavelength output from a table-top Ni-like Cd laser. The microscopy allows inspection of EUVL masks under illumination conditions similar to those used in a 4×-demagnification lithographic stepper. High quality EUV images of absorption patterns in EUVL masks have been obtained. Analysis of these images allows characterizing the printability of patterns and defects on the wafer prior to utilization of the mask for production.
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Menoni, C.S. et al. (2011). Reflection microscope for actinic mask inspection and other progress in soft x-ray laser nano-imaging. In: Lee, J., Nam, C.H., Janulewicz, K.A. (eds) X-Ray Lasers 2010. Springer Proceedings in Physics, vol 136. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-1186-0_41
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DOI: https://doi.org/10.1007/978-94-007-1186-0_41
Publisher Name: Springer, Dordrecht
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