Abstract
The RF front-end – antenna combination of a mobile phone is a vital part of the transmitter and receiver chain because its performance is very relevant to the quality of the wireless link between hand-set and cellular network base-stations.
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Notes
- 1.
The matching impedance is called the impedance to which the load impedance is being transformed by the tunable matching network, irrespective of the source impedance.
References
T. Ranta, J. Ellä, H. Pohjonen, Antenna switch linearity requirements for GSM/WCDMA mobile phone front-ends, in European Conference on Wireless Technology Digest, pp. 23–26, Oct 2005
A. Scuderi, F. Carrara, A. Castorina, G. Palmisano, A high performance RF power amplifier with protection against load mismatches, in IEEE MTT-S Digest, pp. 699–702, June 2003
A. Scuderi, L. La Paglia, F. Carrara, G. Palmisano, A VSWR-protected silicon bipolar RF power amplifier with soft-slope power control. IEEE J. Solid-State Circuits 40(3), 611–621 (Mar 2005)
J. Kang, A. Hajimiri, B. Kim, A single-chip linear CMOS power amplifier for 2.4 GHz WLAN, in IEEE International Solid-State Circuit Conference Digest, pp. 208–209, Feb 2006
I. Aoki, S.D. Kee, D.B. Rutledge, A. Hajimiri, Distributed active transformer – a new power-combining and impedance-transformation technique. IEEE Trans. Microw. Theory Tech. 50, 316–331 (Jan 2002)
http://www.etsi.org,3GPP TS 125 101 v8.3.0 Release 8, technical specification, UMTS; User equipment (UE) radio transmission and reception (FDD)
T. Metzger, M. Maier, H. Klamm, Z. Kovats, D. Ritter, G. Maurer, P. Selmeier, Selection of micro-acoustic technologies for the realization of single-ended/balanced WCDMA duplexers, in IEEE International Microwave Symposium Digest, pp. 835–839, June 2008
P.R. Gray, P.J. Hurst, S.H. Lewis, R.G. Meyer, Analysis and design of analog integrated circuits (Wiley, New York/Chichester, 2001), pp. 7–22
M. Rickelt, H.M. Rein, E. Rose, Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors. IEEE Trans. Electron. Dev. 48(4), 774–783 (Apr 2001)
M.G. Adlerstein, Thermal stability of emitter ballasted HBT’s. IEEE Trans. Electron Devices 45(8), 1653–1655 (Aug 1998)
E. Kreyszig, Advanced engineering mathematics, 6th edn. (Wiley, New York, 1988), p. 588
D.M. Pozar, Microwave engineering (Addison-Wesley, New York, 1990), pp. 84–103
J.L. Min, J.J. Schrage, B.V. Uitgevery Nijgh, van Ditmar, Den Haag, Ontwerpen van analoge en digitale regelsystemen
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van Bezooijen, A., Mahmoudi, R., van Roermund, A. (2011). Adaptive RF Front-Ends. In: Adaptive RF Front-Ends for Hand-held Applications. Analog Circuits and Signal Processing. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9935-8_2
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DOI: https://doi.org/10.1007/978-90-481-9935-8_2
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