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Radiation effects on NAND Flash memories

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Abstract

Electronic chips operating at sea level are constantly bombarded by a shower of high-energy neutrons, which originate from the interactions of cosmic rays with the outer layers of the atmosphere. The neutron flux changes with altitude, reaching a peak very close to the cruise altitude of airplanes, posing an even more serious threat to avionics. In addition, inevitable radioactive contaminants in the chip materials emit alpha particles, which may reach sensitive device areas and produce errors. Spacecraft and satellite electronics must operate reliably in a much harsher environment, characterized by a significant presence of ionizing radiation, in the form of protons, electrons, and heavy-ions coming from various sources. Ionizing radiation can cause either permanent or temporary damage to electronic chips, generating a plethora of effects, from flipping an SRAM memory bit from 1 to 0 or vice versa, to burning-out a power MOSFET.

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  1. University of Padova, Padova, Italy

    M. Bagatin, G. Cellere, S. Gerardin & A. Paccagnella

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Bagatin, M., Cellere, G., Gerardin, S., Paccagnella, A. (2010). Radiation effects on NAND Flash memories. In: Inside NAND Flash Memories. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9431-5_19

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