Abstract
This paper presents the results from a study on the dynamic new technologies that present under various conditions when the current varies in hard switching, these data were obtained in response to use as a case study of the isolation gate bipolar transistor, which is a power semiconductor device.
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Esquivel, C.A., Somuano, J.O., Cantorán, I.M. (2010). Dynamic of New Technologies in Switching Power Devices IGBTs. In: Elleithy, K., Sobh, T., Iskander, M., Kapila, V., Karim, M., Mahmood, A. (eds) Technological Developments in Networking, Education and Automation. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9151-2_45
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DOI: https://doi.org/10.1007/978-90-481-9151-2_45
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