Skip to main content

Dynamic of New Technologies in Switching Power Devices IGBTs

  • Conference paper
  • First Online:
Technological Developments in Networking, Education and Automation

Abstract

This paper presents the results from a study on the dynamic new technologies that present under various conditions when the current varies in hard switching, these data were obtained in response to use as a case study of the isolation gate bipolar transistor, which is a power semiconductor device.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. J.Aguayo., “Análisis Comparativo de Transistores IGBT tipo PT y NPT en Diferentes Modos de Conmutación”, Tesis de Maestría, CENIDET, Cuernavaca, México, 2000.

    Google Scholar 

  2. H. Ruething, F. Umbach, O. Hellmund, P. Kanschat, G.Schmidt, “600 V-IGBT3: Trench Field Stop Technology in 70µm. Ultra Thin Wafer Technology”, Memorias de la conferencia ISPSD, 2003, p.

    Google Scholar 

  3. T. Laska, G. Miller, M. Pfaffenlehner, P. Türkes, D. Berger, B. Gutsmann, P. Kanschat, M. Münzer, “Short Circuit Properties of Trench-/Field-Stop-IGBTs – Design Aspects for a Superior Robustness” Memorias de la conferencia ISPSD, 2003, p. 1-4

    Google Scholar 

  4. H. Iwamoto, H. Kondo,S. Mori, J. Donlon, A. Kawakami, “An Investigation of Turn-off Performance of Planar and Trench-Gate IGBTs under Soft and Hard Switching”, Memorias de la conferencia IAS, 2000, p. 1-6.

    Google Scholar 

  5. R. Mallwitz,R. Tschirbs,M. Pfaffenlehner, A. Mauder, C. Schaeffer, “1700 V Trench IGBT Modules”, Memorias de la conferencia PCIM, 2001, p. 1-6.

    Google Scholar 

  6. X.Kang, A. Caiafa, E. Santi, J. Hudgins, R. Palmer, “Characterization and Modeling of High-Voltage Field-Stop IGBTs”, IEEE Trans. Industry Applications, vol. IA-39/4, p. 922-928, 2003.

    Article  Google Scholar 

  7. R. Kraus, M. Redding, K. Hoffmann, "The Short-Circuit Behaviour of IGBTs Based on Different Technologies", Memorias de la conferencia, EPE, 1995, p. 1_157-1_160.

    Google Scholar 

  8. S.Azzopardi,C. Jamet, J.M. Vinassa, C. Zardini, "Switching Performances Comparison of 1200 V Punch-Through and Punch-Through IGBTs under Hard-Switching at High Temperature", Memorias de la conferencia IEEE PESC, 1998, p. 1201-1207.

    Google Scholar 

  9. www.infineon.com

  10. www.fairchildsemi.com

  11. www.irf.com

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Christian Ayala Esquivel .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2010 Springer Science+Business Media B.V.

About this paper

Cite this paper

Esquivel, C.A., Somuano, J.O., Cantorán, I.M. (2010). Dynamic of New Technologies in Switching Power Devices IGBTs. In: Elleithy, K., Sobh, T., Iskander, M., Kapila, V., Karim, M., Mahmood, A. (eds) Technological Developments in Networking, Education and Automation. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9151-2_45

Download citation

  • DOI: https://doi.org/10.1007/978-90-481-9151-2_45

  • Published:

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-9150-5

  • Online ISBN: 978-90-481-9151-2

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics