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Integrated Resistor Modeling

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Compact Modeling

Abstract

This chapter details models for resistors. Although resistors may seem to be simple devices, in practice the effects of velocity saturation, depletion pinching, and self-heating cause the dc I(V) characteristics to be nonlinear, and for this nonlinearity to vary with geometry and temperature. Even slight nonlinearities in resistors can contribute significantly to distortion and harmonics in highly linear analog and RF circuits, so accurate modeling of the nonlinearities is needed. Parasitics and self-heating also cause the ac behavior of resistors to vary with frequency. Basics of resistor modeling are reviewed, and a physically based 3-terminal resistor model is derived, and shown to be applicable to both poly resistors and diffused resistors (which are really JFETs). The model includes geometry and temperature dependence, and also has statistical variability, including mismatch, built in. Details of some useful parameter extraction procedures are provided.

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References

  1. Banerjee, K., Amerasekera, A., Dixit, G., Hu, C.: Temperature and current effects on small-geometry-contact resistance. In: IEDM Tech. Digest, pp. 115–118 (1997)

    Google Scholar 

  2. Banoo, K., Gummel, H.K., Singhal, K.: Modelling resistor voltage coefficients. Agere Systems Notes (2004)

    Google Scholar 

  3. Bendix, P., Rakers, P., Wagh, P., Lemaitre, L., Grabinski, W., McAndrew, C.C., Gu, X., Gildenblat, G.: RF distortion analysis with compact MOSFET models. In: Proc. IEEE Custom Integrated Circuits Conf., pp. 9–12 (2004)

    Google Scholar 

  4. Booth, R.V.H., McAndrew, C.C.: A 3-terminal model for diffused and ion-implanted resistors. IEEE Trans. Electron Devices 44(5), 809–814 (1997)

    Article  Google Scholar 

  5. Caughey, D.M., Thomas, R.E.: Carrier mobilities in silicon empirically related to doping and fields. Proc. IEEE 55(12), 2192–2193 (1967)

    Article  Google Scholar 

  6. Chen, T.-L., Gildenblat, G.: Symmetric bulk charge linearisation in charge-sheet MOSFET model. Electron. Lett. 37(12), 791–793 (2001)

    Article  Google Scholar 

  7. Compact Model Council web site: http://www.geia.org/index.asp?bid=597

  8. Forsythe, G.E., Malcolm, M.A., Moler, C.B.: Computer Methods for Mathematical Computations. Prentice-Hall, New York (1977)

    MATH  Google Scholar 

  9. Ito, A.: Modeling of voltage-dependent diffused resistors. IEEE Trans. Electron Devices 44(12), 2300–2302 (1997)

    Article  Google Scholar 

  10. Jacoboni, C., Canali, C., Ottaviani, G., Alberigi Quaranta, A.: A review of some charge transport properties of silicon. Solid-State Electron. 20(2), 77–89 (1977)

    Article  Google Scholar 

  11. Lemaitre, L., McAndrew, C.C.: Voltage-controlled-current-source-only Verilog-A resistor model for R≥0. In: Proc. IEEE Behavioral Modeling and Simulation Workshop, pp. 93–95 (2008)

    Google Scholar 

  12. Li, X., Jha, A., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., McAndrew, C.C., Watts, J., Olsen, C.M., Coram, G.J., Chaudhry, S., Victory, J.: Benchmark tests for MOSFET compact models with application to the PSP model. IEEE Trans. Electron Devices 56(2), 243–251 (2009)

    Article  Google Scholar 

  13. Lu, N.C.C., Gerzberg, L., Lu, C.Y., Meindl, J.D.: Modeling and optimization of monolithic polycrystalline silicon resistors. IEEE Trans. Electron Devices ED-28(7), 818–830 (1981)

    Article  Google Scholar 

  14. Massobrio, G., Antognetti, P.: Semiconductor Device Modeling with SPICE, 2nd edn. McGraw-Hill, New York (1983)

    Google Scholar 

  15. McAndrew, C.C., Sekine, S., Cassagnes, A., Wu, Z.: Physically based effective width modeling of MOSFETs and diffused resistors. In: IEEE International Conf. on Microelectronic Test Structures, pp. 169–174 (2000)

    Google Scholar 

  16. McAndrew, C.C.: R3, an accurate JFET and 3-terminal diffused resistor model. In: Tech. Proc. Workshop on Compact Modeling, pp. 86–89 (2004)

    Google Scholar 

  17. McAndrew, C.C., Coram, G., Blaum, A., Pilloud, O.: Correlated noise modeling and simulation. In: Tech. Proc. Workshop on Compact Modeling, pp. 40–45 (2005)

    Google Scholar 

  18. Nagel, L.W.: SPICE2: A computer program to simulate semiconductor circuits. Memo ERL-M520 University of California, Berkeley (1975)

    Google Scholar 

  19. Trofimenkoff, F.N.: Field-dependent mobility analysis of the field-effect transistor. Proc. IEEE 53(11), 1765–1766 (1965)

    Article  Google Scholar 

  20. Tsividis, Y., McAndrew, C.: Operation and Modeling of the MOS Transistor, 3rd edn. Oxford University Press, London (2010)

    Google Scholar 

  21. Victory, J., McAndrew, C.C., Hall, J., Zunino, M.: A 4-terminal compact model for high voltage diffused resistors with field plates. In: IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 139–142 (1997)

    Google Scholar 

  22. Vogelsong, R., Brzezinski, C.: Simulation of thermal effects in electrical systems. In: IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 353–356 (1989)

    Google Scholar 

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Correspondence to Colin C. McAndrew .

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McAndrew, C.C. (2010). Integrated Resistor Modeling. In: Gildenblat, G. (eds) Compact Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-8614-3_9

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  • DOI: https://doi.org/10.1007/978-90-481-8614-3_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-8613-6

  • Online ISBN: 978-90-481-8614-3

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