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Multi-Gate MOSFET Compact Model BSIM-MG

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Compact Modeling

Abstract

As the scaling of conventional planar CMOS is reaching its limits, multiple-gate CMOS structures will likely take up the baton. To facilitate circuit simulation in such advanced technologies, we have developed BSIM-MG: a versatile compact model for multi-gate MOSFETs. In this chapter separate formulations for common multi-gate and independent multi-gate MOSFETs are presented. The core I-V and C-V models are derived and agree well with TCAD simulations without using fitting parameters, reflecting the predictivity and scalability of the model. Physical effects such as volume inversion, short channel effects and quantum mechanical effects are included in the model. We verify BSIM-MG against triple-gate SOI FinFET experimental data. The model fits data very well across a wide range of biases, gate lengths and temperatures. It is also computationally efficient and suitable for simulating large circuits. Finally, several multi-gate circuit simulation examples are presented to demonstrate the use of the model.

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Notes

  1. 1.

    In this chapter we present equations for N-type devices.

  2. 2.

    A substrate still exists underneath the buried oxide or the shallow trench isolation (Figs. 13.1(a)–(c)), but has little influence on the electrostatics in the body.

  3. 3.

    Because of this assumption, BSIM-IMG does not model the case when then back surface enters into strong inversion. This is currently being investigated.

  4. 4.

    The core model assumes μ is constant. High field effects are accounted for later through the incorporation of real device effects.

  5. 5.

    An alternative definition is \(C_{xy}=-\frac{\partial Q_{x}}{\partial V_{y}}\). See, e.g., [38].

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Acknowledgments

We would like to express our sincere appreciation to Dr. Mohan Dunga for his pioneering development of BSIM-IMG and BSIM-CMG. We would also like to thank Dr. Weize Xiong and Dr. Rinn Cleavelin at Texas Instrument, Dr. Paul Patruno at SOITEC, Dr. Jiunn-Ren Hwang and Dr. Fu-Liang Yang at Taiwan Semiconductor Manufacturing Corporation for generously sharing their measured FinFET data. The work presented in this chapter would not have been possible without the funding support by Semiconductor Research Corporation (Task ID: 1451.001) and IMPACT, UC Discovery, and its industrial sponsors.

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Authors and Affiliations

  1. EECS, University of California, Berkeley, CA, USA

    Darsen Lu, Ali Niknejad & Chenming Hu

  2. IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA

    Chung-Hsun Lin

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  1. Darsen Lu
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Correspondence to Darsen Lu .

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  1. , Sch Elect Comptr & Energy Engr, Arizona State University, University Drive and Mill Avenue, Tempe, 85287-9309, Arizona, USA

    Gennady Gildenblat

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Lu, D., Lin, CH., Niknejad, A., Hu, C. (2010). Multi-Gate MOSFET Compact Model BSIM-MG. In: Gildenblat, G. (eds) Compact Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-8614-3_13

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  • DOI: https://doi.org/10.1007/978-90-481-8614-3_13

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