Abstract
The desire to directly integrate MEMS with ASICs in a 3D stack is the main motivation behind the development of a bonding technology suitable for both interconnects and seal rings. SLID (Solid–Liquid Inter-Diffusion) bonding processes based upon Au–Sn and Cu–Sn (high melting point metal/low melting point metal) are therefore investigated. SLID bonding allows for repeated high temperature processing cycles as in the case for chip stacking, or for interconnections and seal rings bonded at different process steps. This work describes results obtained for fluxless bonding of SLID Au–Sn and Cu–Sn interconnects and seal rings, where a thin layer of intermetallic compound (IMC) on the Cu or Sn surface protects the metal surfaces from oxidizing at elevated temperatures. To evaluate the bond strength, test dies bonded at various temperatures were subjected to SEM/EDX bond line analysis, and shear testing at both room and elevated temperatures. Au–Sn samples bonded at 280°C re-melt at elevated temperatures; whereas samples bonded at 350°C remain intact past the initial bonding temperature. For the Cu–Sn samples, the measured shear strength is comparable to conventionally bonded interconnects. In order to remain within the uniformity requirements for SLID bonding, the pattern density of electroplated interconnects and seal rings require an optimized layout which can be calculated based upon the effective area.
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Acknowledgements
This project is funded by RCN BIA project No. 174320, “3DHMNS – 3D Heterogeneous Micro Nano Systems”. The authors wish to thank Zekija Ramic, Ellen M. Husa and Tormod Vinsand at VUC for laboratory assistance.
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Hoivik, N., Liu, H., Wang, K., Salomonsen, G., Aasmundtveit, K. (2010). High-Temperature Stable Au–Sn and Cu–Sn Interconnects for 3D Stacked Applications. In: Gusev, E., Garfunkel, E., Dideikin, A. (eds) Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3807-4_14
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DOI: https://doi.org/10.1007/978-90-481-3807-4_14
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