Abstract
Toward the complete integration of color sensors in CMOS technologies, a novel color sensitive device, the Transverse Field Detector, is proposed. The TFD color detection principle is based on the creation of a transverse, V-shaped electric field configuration in a Silicon active layer. The electric field is generated only by means of surface biasing/ collecting electrodes. Taking advantage on the dependence of the Silicon absorption length with respect to the incoming wavelength, each of the surface contacts collect photo-carriers down to a different depth. In this way three spectral functions are obtained at the three electrodes, without the use of any color filter. Newly developed pixel structures and a preliminary Active Pixel readout circuitry design are presented.
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References
B. E. Bayer, “Color Imaging Array”, US Patent n. 3 971 065, July 1976.
A. El Gamal, H. Eltoukhy “CMOS Image Sensors”, IEEE Circuits and Devices Magazine, pp 6–20, May–June 2005.
Foveon Inc., “Color separation in an active pixel cell imaging array using a triple-well structure”, US Patent n. 5 965 875, October 1999.
P. B. Catrysse, B. A. Wandell, A. El Gamal, “An Integrated Color Pixel in 0.18µm CMOS technology,” 2001 International Electron Devices Meeting – Technical Digest, 559, 2001.
A. Longoni, F. Zaraga, G. Langfelder, L. Bombelli, “The Transverse Field Detector (TFD): a novel color sensitive CMOS device”, Electron Device Letters, [29] n. 12, November 2008.
G. Langfelder, F. Zaraga, A. Longoni, “Tunable spectral responses in a color sensitive CMOS pixel for imaging applications”, submitted to IEEE Trans. on Electron Devices, January 2009.
J. Janesick, F. Gunawan, T. Dosluoglu, J. Tower, N. McCaffrey, “Scientific CMOS Pixels”, Experimental Astronomy vol. 14, 33–43, 2002.
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Langfelder, G., Longoni, A., Zaraga, F. (2010). Design and Realization of a Novel Pixel Sensor for Color Imaging Applications in CMOS 90 nm Technology. In: Malcovati, P., Baschirotto, A., d'Amico, A., Natale, C. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 54. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3606-3_25
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DOI: https://doi.org/10.1007/978-90-481-3606-3_25
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