Abstract
High-resolution wide-bandwidth ADCs in nm-CMOS are key enablers in increasing the level of digitization and integration in cellular base station receivers. This paper discusses smart techniques to overcome the limitations of low supply voltage and low intrinsic device gain. A 14 b 100 MS/s ADC in 90 nm CMOS is described demonstrating that good power efficiency can be achieved in nm-CMOS with a low supply voltage.
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Acknowledgements
The author would like to thank Berry Buter, Maarten Vertregt, Gerard van der Weide, Govert Geelen, Edward Paulus and Hendrik van der Ploeg for contributions to this work, and Joost Briaire, Kostas Doris, Pieter van Beek, Marcel Pelgrom and other members of the High-Speed Data Converter cluster for many fruitful discussions.
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Van de Vel, H. (2010). High-Resolution and Wide-Bandwidth CMOS Pipeline AD Converters. In: Roermund, A., Casier, H., Steyaert, M. (eds) Analog Circuit Design. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3083-2_3
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DOI: https://doi.org/10.1007/978-90-481-3083-2_3
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