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Power Devices

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POWER/HVMOS Devices Compact Modeling

Abstract

Main problems encountered in modelling of high power semiconductor devices are discussed in this paper. Unipolar and bipolar device properties are compared and the problems introduced by high time constant values related to carrier diffusion phenomena in the large base are explained. Traditional and novel concepts of power device modelling and simulation are presented. A new distributed model of power diode that can be integrated into a SPICE-based circuit simulator is described. Together with the existing power MOSFET macromodel, the presented approach can facilitate the design process of power electronic circuits. In the future, distributed models for IGBT and BJT will be added.

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Authors and Affiliations

  1. Department of Microelectronics and Computer Science, Technical University of Lodz, Lodz, Poland

    Andrzej Napieralski, Małgorzata Napieralska & Łukasz Starzak

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  1. Andrzej Napieralski
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  2. Małgorzata Napieralska
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  3. Łukasz Starzak
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Correspondence to Andrzej Napieralski .

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Editors and Affiliations

  1. Ch.de la Dauphine 20, Commugny, 1291, Switzerland

    Wladyslaw Grabinski

  2. (Advanced Modeling Solutions), AdMOS GmbH, Neuffener Str. 5, Frickenhausen, 72636, Germany

    Thomas Gneiting

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Napieralski, A., Napieralska, M., Starzak, Ł. (2010). Power Devices. In: Grabinski, W., Gneiting, T. (eds) POWER/HVMOS Devices Compact Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3046-7_5

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  • DOI: https://doi.org/10.1007/978-90-481-3046-7_5

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