Abstract
The various chapters of this book, dealing with several aspects of the science and technology of RE ions embedded in group-III nitride semiconductors, have been written independently by different authors, who mainly report results obtained within their own laboratories and those of their collaborators. As a consequence, some duplications and contradictions will be apparent to the careful reader of these pages. It is the purpose of this summary to highlight certain areas for which general agreement has been reached and others where controversy still exists. Open questions, which offer opportunities for future research efforts, will also be summarized here.
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(2010). Summary and Prospects for Future Work. In: O’Donnell, K., Dierolf, V. (eds) Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Topics in Applied Physics, vol 124. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-2877-8_11
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DOI: https://doi.org/10.1007/978-90-481-2877-8_11
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-2876-1
Online ISBN: 978-90-481-2877-8
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