A 2D numerical simulation study of a multizone step doped lateral bipolar junction transistor (LBJT) on buried oxide thick step (BOTS) is performed. The combination of multizone doping and BOTS has been used for increasing the breakdown voltage of the device. The steps in doping and step in oxide result in the creation of additional electric field peaks in the collector drift region which increases the uniformity of lateral surface electric field and hence the breakdown voltage. Numerical simulations have revealed that a LBJT with two doping zones and a thick buried oxide results in 200% increase in breakdown voltage than the conventional device. Increasing the number of zones to three from two makes the breakdown voltage 260% higher than the conventional one. An improvement in tradeoff between the breakdown voltage and the on-resistance has been observed in the device. The multizone doping also reduces the kinks in the device characteristics.
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Loan, S.A., Qureshi, S., Iyer, S.S.K. (2009). Investigation of a Multizone Drift Doping Based Lateral Bipolar Transistor on Buried Oxide Thick Step. In: Ao, SI., Gelman, L. (eds) Advances in Electrical Engineering and Computational Science. Lecture Notes in Electrical Engineering, vol 39. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-2311-7_3
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