Abstract
The ever-increasing leakage current with every successive generation of MOSFET urged the researchers to look for a revolutionary change in device architecture. The changeover to SOI-MOSFET, particularly the FD-SOI-MOSFET , succeeded to a large extent in meeting the challenges without any fundamental modification of the structure. Alternative choices proposed were trigate FET and FINFET structures, which marked the end of planar era and entailed a radical change from a planar device to a three-dimensional shape for rejuvenating the IC industry. This chapter explains how wrapping the gate insulator around the body region of a MOSFET is an effective way of increasing the capability of the gate to mitigate the various encumbrances faced with short-channel devices. A comparative study of FINFETs fabricated on SOI wafers and bulk silicon wafers is presented. The neck-to-neck battle between FINFET and FD-SOI-MOSFET to clinch the supreme position is described by pointing out their relative beneficial aspects and downsides.
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References
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Review Exercises
Review Exercises
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7.1
Why is a large portion of substrate of no use to device operation in bulk silicon MOSFET? What harmful effects does this unutilized portion of substrate produce?
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7.2
Elaborate the effects of thickness of the body region of a nanoscale MOSFET on its performance.
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7.3
How does the deployment of multiple gates affect the operation of a MOSFET?
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7.4
Explain the origin of the name of FINFET device from its construction.
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7.5
Is FINFET an SOI-MOSFET? Give reasons for your answer.
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7.6
How does the substrate of a FINFET made from bulk silicon wafer impair its functioning? What remedy do you suggest?
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7.7
Which of the two devices is susceptible to self-heating? FINFET or FD-SOI-MOSFET? Why?
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7.8
Why is the drive current of a FINFET said to be quantized?
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7.9
Why cannot a single FINFET device made of a thicker body region supply a larger drive current? Why is it necessary to connect several fins in parallel?
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7.10
Point out the pros and cons of FINFET with respect to FD-SOI-MOSFET.
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7.11
How does a shorted gate FINFET differ from an isolated gate FINFET? Discuss their relative merits and demerits.
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7.12
Name three types of FINFETs classified on the basis of asymmetry. How do these classifications relate to interchangeability of source and drain?
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7.13
Why is FINFET less vulnerable to random doping effects than planar MOSFET? What type of variations cannot be avoided with FINFET?
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Khanna, V.K. (2016). Trigate FETs and FINFETs . In: Integrated Nanoelectronics. NanoScience and Technology. Springer, New Delhi. https://doi.org/10.1007/978-81-322-3625-2_7
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DOI: https://doi.org/10.1007/978-81-322-3625-2_7
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