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Trigate FETs and FINFETs

  • Vinod Kumar Khanna
Chapter
Part of the NanoScience and Technology book series (NANO)

Abstract

The ever-increasing leakage current with every successive generation of MOSFET urged the researchers to look for a revolutionary change in device architecture. The changeover to SOI-MOSFET, particularly the FD-SOI-MOSFET , succeeded to a large extent in meeting the challenges without any fundamental modification of the structure. Alternative choices proposed were trigate FET and FINFET structures, which marked the end of planar era and entailed a radical change from a planar device to a three-dimensional shape for rejuvenating the IC industry. This chapter explains how wrapping the gate insulator around the body region of a MOSFET is an effective way of increasing the capability of the gate to mitigate the various encumbrances faced with short-channel devices. A comparative study of FINFETs fabricated on SOI wafers and bulk silicon wafers is presented. The neck-to-neck battle between FINFET and FD-SOI-MOSFET to clinch the supreme position is described by pointing out their relative beneficial aspects and downsides.

Keywords

Bulk Silicon Gate Width Planar Device Bury Oxide Layer Random Doping Fluctuation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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Copyright information

© Springer India 2016

Authors and Affiliations

  1. 1.MEMS and Microsensors GroupCSIR-Central Electronics Engineering Research InstitutePilaniIndia

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