Transition metal dichalcogenides (TMDs) serve as a two-dimensional, layered-structure, semiconducting material option to the gapless graphene in which carrier mobility is degraded by present bandgap engineering methods, predominantly by edge scattering . The TMD family includes compounds made of a transition metal, commonly Mo, W, Nb, Ta, Ti with a chalcogen atom, e.g., S, Se, Te. Preparation methods of atomically thin films of transition metal dichalcogenides, their properties and applications in nanoelectronics are described. Mechanical exfoliation has been widely used for laboratory studies of these thin films. The CVD approach is capable of producing homogenous films over large surface areas. It offers a facile route for nanoelectronic device manufacturing on wafers. Its compatibility with existing semiconductor fabrication facilities is additionally favorable. Single layer, bilayer, and multiple layer FET devices have shown the dependence of carrier mobility on TMD layer thickness and quality of contacts. Present status of these devices is presented. Their promising electrical characteristics call for more efforts for integrating them with silicon electronics.
Graphene Oxide Atomic Layer Deposition Chalcogen Atom Back Gate MoS2 Layer
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