Semiconductor Nanowire as a Nanoelectronics Platform
Bottom-up approach to nanowire synthesis using vapour-liquid-solid technique is outlined. Pros and cons of this approach with top-down paradigms are highlighted. Using silicon nanowires, the fabrication of P-N junction diodes, bipolar and field-effect transistors as well as complementary inverters is described. Fabrication and operation of P-channel Ge/Si heterostructure and N-channel GaN/AlN/AlGaN heterostructure nanowire transistors is discussed. Placement of nanowires at desired locations and their interconnections to form logic circuits is addressed. Cross-bar architecture is an accepted structure, which has rendered possible the gainful utilization of the unique properties of nanowires. The nanowires can act as versatile building blocks for the assembly of nanoelectronic circuits.
KeywordsSilicon Nanowires Nanowire Growth Nanowire Transistor Silicon Shell Complementary Inverter