• Vinod Kumar Khanna
Part of the NanoScience and Technology book series (NANO)


The field of spintronics is introduced and differentiated from magnetoelectronics. Augmentation of the capabilities of nanoelectronics by the addition of two spin degrees of freedom to the preexisting two charge degrees of freedom is explained. The spin degrees of freedom can also be used alone to create functional devices. The role of spintronics as a bridge between semiconductor ICs and magnetic storage is elucidated. The technologically recognized spintronic device working on giant magnetoresistance effect is compared with normal magnetoresistance. The operation of magnetic tunnel junction devices for providing high magnetoresistance ratios is described. Performance of MRAM is compared with SRAM, DRAM and flash memory devices. Besides fast access, the capability of spin transfer torque RAM to decrease the write current in comparison to MRAM is indicated. The main application areas of spintronics in computer hard disks and magnetic random access memory devices are highlighted.


Random Access Memory Ferromagnetic Layer Spintronic Device Spin Valve Dynamic Random Access Memory 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer India 2016

Authors and Affiliations

  1. 1.MEMS and Microsensors GroupCSIR-Central Electronics Engineering Research InstitutePilaniIndia

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