Abstract
The external efficiency of nonpolar p-GaN/i-In α Ga(1-α)N/n-GaN solar cells was simulated using limited constituent approach. Reduction of the poor effect of conduction band peak is done which is seen at the n-GaN/i-In α Ga(1-α)N interface. This particular effect is trimmed down by sinking the peak thickness. The optimization is done of p-doping in i-In α Ga(1-α)N layer on different indium composition (α) which reduces the thickness of conduction band peak and assists the carriers to flow through the peak. Our optimizations are presented here which predict 53.53 % efficiency for p-GaN/i-In0.37Ga(1-0.37)N/n-GaN device at 1 × 1016 cm−3 p-doping and 480 nm thickness of i-In α Ga(1-α)N layer using realistic material parameters.
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Manoj Thosar, Khanna, R.K., Thosar, A.J. (2016). Simulation of p-GaN/i-InαGa(1-α)N/n-GaN Solar Cell for Maximum Efficiency. In: Afzalpulkar, N., Srivastava, V., Singh, G., Bhatnagar, D. (eds) Proceedings of the International Conference on Recent Cognizance in Wireless Communication & Image Processing. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2638-3_69
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DOI: https://doi.org/10.1007/978-81-322-2638-3_69
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