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Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs

  • Nilesh Goel
  • Souvik Mahapatra
Chapter
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 52)

Abstract

In this chapter, a comprehensive model is proposed to describe NBTI degradation in SiON and HKMG p-MOSFETs. The model is based on the physical mechanism of NBTI established in earlier chapters, has mutually uncorrelated trap generation and trapping subcomponents, and can predict ultra-fast measured stress and recovery data under DC and AC stress. Time evolution of NBTI degradation and recovery during and after DC stress as well as during multiple DC stress and recovery cycles for different stress bias, temperature and recovery bias can be successfully explained. The model can explain time evolution of AC degradation for different pulse frequency, duty cycle, and pulse low bias, and can explain measurements after last half or full cycle of AC pulse. The model is consistent with the compact model presented in Chap.  4, and can successfully explain the gate insulator process and material dependence for both SiON and HKMG devices, and can also predict long-time DC and AC degradation to determine NBTI lifetime.

Keywords

Gate Insulator Half Cycle Charge Pumping Interface Trap Trap Generation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgment

The authors would like to acknowledge Sandip De, Rajan Pandey and K.V.R.M. Murali for DFT calculations, Vrajesh Maheta for NBTI measurements in SiON devices, Subhadeep Mukhopadhyay for DCIV and Bijesh Rajamohanan for flicker noise measurements in HKMG devices, Tejas Naphade for his contribution and useful discussion, Applied Materials for devices used in this study, and Ankush Chaudhary for editorial support.

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© Springer India 2016

Authors and Affiliations

  1. 1.Department of Electrical EngineeringIndian Institute of Technology BombayMumbaiIndia

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