Temperature Effect on Optical Gain of CdSe/ZnSe Quantum Dots

  • Dharmendra Kumar
  • C. M. S. Negi
  • Jitendra Kumar
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 166)


In this work, theoretical formulation for the computation of electronic structure and gain spectra of CdSe/ZnSe quantum dot has been developed in the framework of multi-band k.p. approach. The optical gain of CdSe/ZnSe quantum dot has been determined. The gain is found to increase with carrier density but it is found to decrease as we increase the temperature.


Carrier Density Gain Spectrum Peak Gain Effective Mass Approximation Dipole Matrix Element 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
    Liu H et al (2011) Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nat Photonics 5:416–419CrossRefADSGoogle Scholar
  2. 2.
    Negi CMS, Kumar D, Gupta SK, Kumar J (2013) Theoretical analysis of resonant cavity p-type quantum dotinfrared photodetector. IEEE J Quantum Electron 49:839–845CrossRefADSGoogle Scholar
  3. 3.
    Valerini D et al (2005) Temperature dependence of the photoluminescence properties of colloidal CdSe/ZnS core/shell quantum dots embedded in a polystyrene matrix. Phy Rev B 71(1–6):235409CrossRefADSGoogle Scholar
  4. 4.
    Ranjbaran A (2012) Temperature effects on output characteristics of quantum dot white light emitting diode. Front Optoelectron 5(3):284–291CrossRefGoogle Scholar
  5. 5.
    Chuang SL (2009) Physics of photonic devices. Wiley, HobokenGoogle Scholar
  6. 6.
    Luttinger JM (1956) Quantum theory of cyclotron resonance in semiconductors: general theory. Phys Rev 102:1030–1041CrossRefADSMATHGoogle Scholar
  7. 7.
    Kumar J, Kapoor S, Gupta SK, Sen PK (2006) Theoretical investigation of the effect of asymmetry on optical anisotropy and electronic structure of Stranski-Krastanov quantum dots. Phys Rev B 74(1–10):115326CrossRefADSGoogle Scholar
  8. 8.
    Kumar D, Negi CMS, Gupta SK, Kumar J (2013) Effect of shape anisotropy and size on electronic structure of CdSe/ZnSe quantum dots. IEEE Trans Nanotechnol 12:925–930CrossRefADSGoogle Scholar
  9. 9.
    Sugawara M, Mukai K, Nakata Y, Ishikawa H, Sakamoto A (2000) Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled InxGa1-xAs/GaAs quantum dot lasers. Phy Rev B 61(11):7595–7603CrossRefADSGoogle Scholar
  10. 10.
    Sakamoto A, Sugawara M (2000) Theoretical calculation of lasing spectra of quantum-dot lasers: effect of homogeneous broadening of optical gain. IEEE Photonics Technol Lett 12:107–109CrossRefADSGoogle Scholar
  11. 11.
    Asada M et al (1986) Gain and the threshold of three-dimensional quantum-box lasers. IEEE J Quantum Electron 22:1915–1921CrossRefADSGoogle Scholar
  12. 12.
    Kostić R et al (2011) Nonlinear absorption spectra for intersubband transitions of CdSe/ZnS spherical quantum dots. J Nanophotonics 5:051810Google Scholar
  13. 13.
    Bahae MS, Hagan DJ, Strylandn EWV (1991) Dispersion of bound electronic nonlinear refraction in solids. IEEE J Quantum Electron 27:1296–1309CrossRefADSGoogle Scholar
  14. 14.
    Adachi S (2005) Properties of Group-IV, III–V and II–VI Semiconductors. Wiley, New JerseyGoogle Scholar
  15. 15.
    Ekimov AI, Hache F et al (1993) Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions. Opt Soc Am B 10:100–107CrossRefADSGoogle Scholar

Copyright information

© Springer India 2015

Authors and Affiliations

  • Dharmendra Kumar
    • 1
  • C. M. S. Negi
    • 2
  • Jitendra Kumar
    • 1
  1. 1.Department of Electronics EngineeringIndian School of MinesDhanbadIndia
  2. 2.Department of ElectronicsBanasthaliVidyapithBanasthaliIndia

Personalised recommendations