Abstract
Optical absorption plays a significant role in measuring of direct bandgap of semiconductors. In the present paper absorption of light in nano-film of widegap semiconductor GaAs is studied. It is observed that such absorption is quantum in nature increasing stepwise with increase in photon energy. This is because of restructuring of energy levels in the quantum film. This interesting property of the light particle quantum absorption leads to the prospect of innovating ultrathin films to be used as novel optical absorber.
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Mukherjee, M., Ghosh, K.K. (2015). Light Absorption in Nano-film of Wide Band Gap Semiconductor. In: Lakshminarayanan, V., Bhattacharya, I. (eds) Advances in Optical Science and Engineering. Springer Proceedings in Physics, vol 166. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2367-2_45
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DOI: https://doi.org/10.1007/978-81-322-2367-2_45
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Online ISBN: 978-81-322-2367-2
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