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Light Absorption in Nano-film of Wide Band Gap Semiconductor

  • Moumita Mukherjee
  • K. K. Ghosh
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 166)

Abstract

Optical absorption plays a significant role in measuring of direct bandgap of semiconductors. In the present paper absorption of light in nano-film of widegap semiconductor GaAs is studied. It is observed that such absorption is quantum in nature increasing stepwise with increase in photon energy. This is because of restructuring of energy levels in the quantum film. This interesting property of the light particle quantum absorption leads to the prospect of innovating ultrathin films to be used as novel optical absorber.

Keywords

Conduction Band Valence Band Ultrathin Film Valence Band State Heavy Hole Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer India 2015

Authors and Affiliations

  1. 1.Centre for Millimeter-Wave Semiconductor Devices and Systems (CMSDS)DRDOKolkataIndia
  2. 2.Institute of Engineering and Management (IEM)KolkataIndia

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