Growth of Blue Luminescent Cu Doped ZnO Nanowires by Modified Sol-Gel
Copper doped ultra small highly luminescent ZnO nanowires were obtained by modified sol gel route. The zinc acetate mixed with ethanol was used as precursor for the synthesis. Copper doping was done by adding various concentrations of copper chloride. Gel was obtained by magnetically stirring the mixture at 60 °C for 2–3 h and then keeping it for another 24 h for aging. The particles obtained were characterized by XRD, AFM, Optical transmission and photoluminescence studies. X ray diffractogram peak is identified for ZnO. AFM micrograph shows particle alignment in linear direction and formation of nanowires on increasing Cu concentration. The optical band gap of copper doped ZnO shift from 3.2 to 4.76 eV. This strong shift confirms the ultra small size of particles. In PL studies, Undoped ZnO nanostructures exhibit a near-band-edge UV emission at 360 nm and a broad defect related blue emission at 440 nm. Addition of Copper improves the photoluminescence peak in UV region with an additional peak observed in middle UV region at 230 nm. Yellow green or blue makes the nanowires suitable for light emitting devices and biological sensing devices.
KeywordsCopper Chloride Near Band Edge Strong Blue Shift Ultra Small Size Short Wavelength Device
The authors are thankful for providing XRD and AFM facility to UGC-DAE consortium for scientific research Indore India and P C Ray research centre, ITM University Gwalior (MP) for providing optical and photoluminescence facilities.
- 9.Kiyotaka M, Kazuyuki H, Shimotuma Y (2011) Nanotechnology and Nanomaterials. In: Abass H (ed) Nanowires—fundamental research, InTech, RijekaGoogle Scholar
- 10.Ozgur U, Morkoç H (2006) Optical properties of ZnO and related alloys. In: Jagadish C, Pearton S (eds) Zinc oxide bulk, thin films and nanostructures, Elsevier, Amsterdam, pp 175–239Google Scholar
- 12.Ilican S, Caglar Y, Claglar M (2008) Preparation and characterization of ZnO thin films deposited by sol-gel spin coating method. J Opto Electron Adv Mater 10:2578–2583Google Scholar