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Design and Analysis of Memristor Based Non-volatile Memories

  • Shyam Akashe
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 166)

Abstract

Emerging NVM devices like memristor, spin-transfer torque magnetic tunneling junction (STT-MTJ), phase-change memory has drawn great interests both from academia and industry. This article presents a new memory hierarchy system using next-generation non-volatile memory devices merging the characteristics of the conventional one. The utilization of non-volatile memory technology, has released new chances for low power, low cost, high density and higher endurance circuits which are very competitive and striving than DRAM as well as SRAM memory cells. By congregating the functions of DRAM, ROM, FLASH and SRAM, this non-volatile technology can lead to a new memory system which will simplify the architecture of the system and enhance its performance. There are different memory technologies of non-volatile nature in the literature such as FeRAM, STTRAM, RRAM, MRAM, PCRAM etc. These non-volatile memory technology acts as a backbone for providing required storage for nano-computing applications. Not a single technology can satisfy all the requirements of low cost, high density, low energy, low latency, and high endurance. So, Emerging Non-Volatile Memories were designed and analyzed.

Keywords

Memory Technology Resistive Random Access Memory Magnetic Tunneling Junction Spin Torque Transfer Magnetic Random Access Memory 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer India 2015

Authors and Affiliations

  1. 1.Department of ECEITM UniversityGwaliorIndia

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