Abstract
In this paper, we have formulated a two-dimensional (2D) analytical model for surface potential and electric field of a p-type tri-material gate (TMG) gate-all-around (GAA) nanowire tunneling field effect transistor (TFET). The proposed model includes the effect of voltage at the drain end, work functions of the gate metal, oxide thickness, and radius of the silicon nanowire. Incorporating the advantages of surrounding gate with three different gate material work functions, this nanostructure of TMG GAA TFET is proposed and shows improved electrical characteristics. Also a step change of potential along the channel is obtained, which screens the region R1 from the drain potential variations, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects, which are investigated by developing a 2D analytical model. The analytical results are compared and verified with the simulation results.
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Saraswathi, D., Balamurugan, N.B., Priya, G.L., Manikandan, S. (2015). A Compact Analytical Model for 2D Triple Material Surrounding Gate Nanowire Tunnel Field Effect Transistors. In: Mandal, D., Kar, R., Das, S., Panigrahi, B. (eds) Intelligent Computing and Applications. Advances in Intelligent Systems and Computing, vol 343. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2268-2_35
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DOI: https://doi.org/10.1007/978-81-322-2268-2_35
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