Abstract
In this paper, a new scale length theory for tri-material surrounding gate tunnel field-effect transistor (TMSG-TFET) has been proposed and derived. The scale length accounts for the effective conduction path of subthreshold leakage and thereby captures the short-channel effects (SCEs) and subthreshold factor. In order to derive the subthreshold swing in terms of scaling factor, the effective conducting path effect (ECPE) must be considered. Compared to conventional scaling theory, scaling of TMSG-TFET with ECPE has shown a much lower subthreshold slope (SS) of S < 60 mV/dec. The simulations of the proposed work are performed using 2D TCAD Sentaurus device simulator. The analytical results are compared and verified with the TCAD simulation results. Finally, results of the proposed work are compared with the scaling theory for MOSFETs with ECPE.
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Vanitha, P., Lakshmi Priya, G., Balamurugan, N.B., Theodore Chandra, S., Manikandan, S. (2015). Analytical Approach on the Scale Length Model for Tri-material Surrounding Gate Tunnel Field-Effect Transistors (TMSG-TFETs) . In: Mandal, D., Kar, R., Das, S., Panigrahi, B. (eds) Intelligent Computing and Applications. Advances in Intelligent Systems and Computing, vol 343. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2268-2_25
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DOI: https://doi.org/10.1007/978-81-322-2268-2_25
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