Interconnects

Abstract

This chapter briefs about the modeling and classifications of very large scale integration (VLSI) interconnects in deep submicron and nanoscale technology. In current deep submicron (DSM) technology, the clock frequency rapidly increases with shrinking feature sizes. The demand in higher speed and component density of future IC technology increases the resistivity of aluminum (Al) and copper (Cu) interconnects. Therefore, researchers are forced to find an alternative solution for future high-speed global VLSI interconnects. This chapter introduces carbon nanotube, graphene nanoribbon, silicon nanowire, spintronics, and plasmonics as possible replacement of conventional  Al or Cu based interconnects. The properties and various advantages of these materials are discussed briefly in this chapter.