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2D Simulation of Static Interface States in GaN HEMT with AlN/GaN Super-Lattice as Barrier Layer

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Proceedings of International Conference on Soft Computing Techniques and Engineering Application

Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 250))

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Abstract

In this paper, two-dimensional simulation of interface charge effects in GaN-based high-electron-mobility transistors (HEMT) with AlN/GaN super-lattice (SL) device is performed. Charges of different polarity and magnitude are introduced in the interface, and their relative modification of drain current is studied. We have found that drain current has very different response to positive and negative charges of equal magnitude. Free hole accumulation at the interface is considered to give raise to different sensitivity for positive and negative interface charges. We have also investigated the drain current response for changed SL period thickness and equivalent Al composition of the quasi-alloy with different interface charge. The implication of our study in current collapse and related dispersion effects is discussed.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Ahsanullah University of Science and Technology, 141-142 Love Road, Tejgaon Industrial Area, Dhaka, 1208, Bangladesh

    Imtiaz Alamgir & Aminur Rahman

Authors
  1. Imtiaz Alamgir
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  2. Aminur Rahman
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Correspondence to Imtiaz Alamgir .

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Editors and Affiliations

  1. Dept of Computer Science and Engineering, SOA University, Bhubaneswar, Orissa, India

    Srikanta Patnaik

  2. Electronics and Computer Engg Tech., Indiana State University, Indiana, Indiana, USA

    Xiaolong Li

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Alamgir, I., Rahman, A. (2014). 2D Simulation of Static Interface States in GaN HEMT with AlN/GaN Super-Lattice as Barrier Layer. In: Patnaik, S., Li, X. (eds) Proceedings of International Conference on Soft Computing Techniques and Engineering Application. Advances in Intelligent Systems and Computing, vol 250. Springer, New Delhi. https://doi.org/10.1007/978-81-322-1695-7_53

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  • DOI: https://doi.org/10.1007/978-81-322-1695-7_53

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  • Publisher Name: Springer, New Delhi

  • Print ISBN: 978-81-322-1694-0

  • Online ISBN: 978-81-322-1695-7

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