Quantum Dot Gate Field-Effect Transistors: Theory and Device Modeling

  • Supriya Karmakar


The device model of the QDGFET and its theory are discussed in Chapter 4. The modification of band diagram of QDGFET due to the presence of quantum dots in the gate region is shown in this chapter. The theory of operation based on self-consistent solution of Schrödinger and Poisson equations is also presented in this chapter.


Threshold Voltage Gate Voltage Gate Insulator Energy Band Diagram Free Hole 
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Copyright information

© Springer India 2014

Authors and Affiliations

  • Supriya Karmakar
    • 1
  1. 1.Intel CorporationHillsboroUSA

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