Abstract
Chapter 3 discusses different fabrication steps and characterization results of QDGFETs. Characterization of different quantum dots as well as gate insulator layer is also presented in this chapter. Transfer characteristics and output characteristics of QDGFETs are also presented in this chapter. The improvement of subthreshold swing in SOI (silicon-on-insulator) is also demonstrated in this chapter.
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Karmakar, S. (2014). Quantum Dot Gate Field-Effect Transistors: Fabrication and Characterization. In: Novel Three-state Quantum Dot Gate Field Effect Transistor. Springer, New Delhi. https://doi.org/10.1007/978-81-322-1635-3_3
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DOI: https://doi.org/10.1007/978-81-322-1635-3_3
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