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Quantum Dot Gate Field-Effect Transistor: Device Structures

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Novel Three-state Quantum Dot Gate Field Effect Transistor

Abstract

Chapter 2 introduces quantum dot gate field-effect transistors (QDGFETs). Different types of quantum dots (SiO x -cladded Si and GeO x -cladded Ge) are self-assembled on different kinds of gate insulator like silicon dioxide as well as high-κ dielectric. Different kinds of substrates (silicon and silicon-on-insulator) are also introduced as different material systems.

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Authors and Affiliations

  1. Intel Corporation, Hillsboro, Oregon, USA

    Supriya Karmakar

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  1. Supriya Karmakar
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Karmakar, S. (2014). Quantum Dot Gate Field-Effect Transistor: Device Structures. In: Novel Three-state Quantum Dot Gate Field Effect Transistor. Springer, New Delhi. https://doi.org/10.1007/978-81-322-1635-3_2

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  • DOI: https://doi.org/10.1007/978-81-322-1635-3_2

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  • Publisher Name: Springer, New Delhi

  • Print ISBN: 978-81-322-1634-6

  • Online ISBN: 978-81-322-1635-3

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