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Multilayer Pyramidal Symmetric Inductor

  • Genemala Haobijam
  • Roy Paily Palathinkal
Chapter

Abstract

In most of the integrated circuits like amplifiers, mixers, oscillators, etc., the differential topology is preferred because of its less sensitivity to noise and interference. There are mainly two categories of differential inductor design found in the literature. The first one is a pair of asymmetric planar inductors connected together in series [1] as shown in Fig. 1.9 symmetric (differential). Since the currents always flow in opposite direction in these two inductors, there must be enough spacing between them to minimize electromagnetic coupling. As a result, the overall area occupied is very large. The second one is the planar symmetric inductor of [2] as shown in Fig. 1.10 which is realized by joining coupled microstrip from one side of an axis of symmetry to the other using a number of cross-over and cross-under connections. An intermediate metal layer is dedicated for the underpass of the cross coupled connections. The center-tapped idea was proposed in [3] for balanced circuits and this type of winding of the metal trace was first applied to monolithic transformers [4]. The symmetrical inductor under differential excitation results in a higher quality factor and self resonance frequency. It also occupies less area than its equivalent pair of asymmetrical inductors. Since these structures are planar, the area is still large. Minimization of inductor area is equally important as enhancing the performance to reduce the production cost. A multilevel symmetric inductor can be realized by stacking two differential inductor of [2] as shown in Fig. 3.1. The structure is a natural extension of the planar differential inductor. This structure is referred hereafter as multilayer conventional symmetric inductor. Realization of cost effective symmetric inductor structures with minimum area without performance degradation is addressed in this chapter.

Keywords

Quality Factor Metal Layer Device Under Test Inductor Structure Spiral Inductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    Craninckx, J., Steyaert, M.: A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors. IEEE J. Solid-State Circuits 32(5), 736–744 (1997)Google Scholar
  2. 2.
    Danesh, M., Long, J.R.: Differentially driven symmetric microstrip inductors. IEEE Trans. Microw. Theory Tech. 50(1), 332–341 (2002)CrossRefGoogle Scholar
  3. 3.
    Kuhn, W.B., Elshabini-Riad, A., Stephenson, F.W.: Centre-tapped spiral inductors for monolithic bandpass filters. Electron. Lett. 31(8), 625–626 (1995)CrossRefGoogle Scholar
  4. 4.
    Rabjohn, G.G.: Monolithic microwave transformers. Master’s thesis, Carleton University, Ottawa, ON, Canada (1991)Google Scholar
  5. 5.
    Haobijam, G., Paily, R.: Design of multilevel pyramidically wound symmetric inductor for cmos rfics. Analog Integr. Circ. Sig. Process 63(1), 9–21 (2010)CrossRefGoogle Scholar
  6. 6.
    Edelstein, D.C., Burghartz, J.N.: Spiral and solenoidal inductor structures on silicon using Cu-damascene interconnects, In: Proceeding of IEEE International Interconnect Technology Conference, pp. 18–20 June 1998Google Scholar
  7. 7.
    Yim, S.-M., Chen, T., Kenneth, K.O.: The effects of a ground shield on the characteristics and performance of spiral inductors. IEEE J. Solid-State Circuits 37(2), 237–244 (Feb. 2002)CrossRefGoogle Scholar
  8. 8.
    Pettenpaul, E., Kapusta, H., Weisberger, A., Mampe, H., Luginsland, J., Wolff,I.: Cad models of lumped elements on gaas up to 18 ghz. IEEE Trans. Microwave Theory Tech. 36, 294–304 (1988)Google Scholar
  9. 9.
    Zolfaghari, A., Chan, A., Razavi, B.: Stacked inductors and transformers in CMOS technology. IEEE J. Solid-State Circuits 36(4), 620–628 (2001)CrossRefGoogle Scholar
  10. 10.
    Tang, C.-C., Wu, C.-H., Liu, S.-I.: Miniature 3-D inductors in standard CMOS process. IEEE J. Solid-State Circuits 37(4), 471–480 (2002)CrossRefGoogle Scholar
  11. 11.
    Bennett, H.S., Brederlow, R., Costa, J.C., Cottrell, P.E., Huang, W.M., Immorlica, A.A., Mueller, J.E., Racanelli, M., Shichijo, H., Weitzel, C.E., Zhao, B.: Device and technology evolution for silicon-based RF integrated circuits. IEEE Trans. Electron Devices 52(7), 1235–1258 (2005)CrossRefGoogle Scholar
  12. 12.
    Farina, M., Rozzi, T.: A 3-D integral equation-based approach to the analysis of real-life MMICs-application to microelectromechanical systems. IEEE Trans. Microw. Theory Tech. 49(12), 2235–2240 (2001)CrossRefGoogle Scholar
  13. 13.
    Koutsoyannopoulos, Y.K., Papananos, Y.: Systematic analysis and modeling of integrated inductors and transformers in RFIC design. IEEE Trans. Circuits Syst. II 47(8), 699–713 (2000)CrossRefGoogle Scholar
  14. 14.
    Long, J.R., Copeland, M.A.: The modeling, characterization, and design of monolithic inductors for silicon RF IC’s. IEEE J. Solid-State Circuits 32(3), 357–369 (1997)CrossRefGoogle Scholar
  15. 15.
    Haobijam, G., Paily, R.: Performance study of fixed value inductors and their optimization using electromagnetic simulator. Microwave Opt. Technol. Lett. 50(5), 1205–1210 (2008)CrossRefGoogle Scholar
  16. 16.
    Teo,T.H., Choi, Y.-B., Liao, H., Xiong,Y.-Z., Fu,J. S.: Characterization of symmetrical spiral inductor in 0.35 \(\upmu \)m CMOS technology for RF application. Solid State Electron. 48(9), 1643–1650 (2004)Google Scholar
  17. 17.
    EUROPRACTICE IC Service. http://www.europractice-ic.com
  18. 18.
    Aguilera, J., Berenguer, R.: Design and Test of Integrated Inductors for RF Applications. Kluwer Academic Publishers, Boston (2003)Google Scholar
  19. 19.
    Aktas, A., Ismail, M.: Pad de-embedding in RF CMOS. IEEE Circuits Devices Mag. 17(3), 8–11 (2001)CrossRefGoogle Scholar
  20. 20.
    Pun, A.L.L., Yeung, T., Lau, J., Clement, J.R., Su, D.K.: Substrate noise coupling through planar spiral inductor. IEEE J. Solid-State Circuits 33(6), 877–884 (1998)CrossRefGoogle Scholar

Copyright information

© Springer India 2014

Authors and Affiliations

  1. 1.R&D 3, ATG, SELSamsung Noida Mobile CentreNoidaIndia
  2. 2.Department of Electronics and Electrical EngineeringIndian Institute of Technology GuwahatiGuwahatiIndia

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