Abstract
On-chip spiral inductors are extensively used in analog, mixed signal and radio frequency integrated circuits. High performance on-chip inductors have become increasingly important and with the increasing frequencies of operation of the circuits, the on-chip inductors have gained even more importance [1]. Complementary metal oxide semiconductor (CMOS) technology has been widely adopted for its mature and mass productivity [2, 3]. Steady improvements in the radio frequency characteristics of CMOS devices via scaling is driven by advancement in lithography. It has enabled increased integration of RF functions. Spiral inductors are widely used even at microwave frequencies and their applications in millimeter-wave circuits are investigated [4]. In this chapter a brief summary of the silicon integrated passive devices is given in Sect. 1.1. An introduction to on-chip inductor is presented in Sect. 1.2. The losses in the conductor and the substrate are also explained. An overview of the evolution and progress of the on-chip inductor with a review on the integrated inductor design is presented in Sect. 1.3. The design complexity and performance issues are also discussed.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
RF and AMS technologies for wireless communications. The International Technology Roadmap For Semiconductors, 2007 edn. http://www.itrs.net/Links/2007ITRS/Home2007.htm
Bennett, H.S., Brederlow, R., Costa, J.C., Cottrell, P.E., Huang, W.M., Immorlica, A.A., Mueller, J.E., Racanelli, M., Shichijo, H., Weitzel, C.E., Zhao, B.: Device and technology evolution for silicon-based RF integrated circuits. IEEE Trans. Electron Dev. 52(7), 1235–1258 (2005)
Abidi, A.A.: Rf cmos comes of age. IEEE J. Solid-State Circuits 39(4), 549–561 (2004)
Dickson, T., LaCroix, M.-A., Boret, S., Gloria, D., Beerkens, R., Voinigescu, S.: 30–100–GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits. IEEE Trans. Microw. Theory Tech. 53(1), 123–133 (2005)
Pedder, D.J.: Technology and infrastructure for embedded passive components. On Board Technology, pp. 8–11 (2005)
Ulrich, R.K., Brown, W.D., Ang, S.S., Barlow, F.D., Elshabini, A., Lenihan, T.G., Naseem, H.A., Nelms, D.M., Parkerson, J., Schaper, L.W., Morcan, G.: Getting aggressive with passive devices. IEEE Circuits Devices Mag. 16(5), 16–25 (2000)
11b WLAN transceiver shrinks circuit board and bill of material. Application note. http://www.eetindia.co.in
Matsuzawa, A.: RF-Soc—Expectations and required conditions. IEEE Trans. Microw. Theory Tech. 50(1), 245–253 (2002)
Dunn, J.S., Freeman, G., Greenberg, D.R., Groves, R.A., Guarin, F.J., Hammad, Y., Joseph, A.J., Lanzerotti, L.D., Onge, S.A.S., Orner, B.A., Rieh, J.-S., Stein, K.J., Voldman, S.H., Wang, P.-C., Zierak, M.J., Subbanna, S., Harame, D.L., Herman, D.A., Meyerson, J.B.S.: Foundation of RF CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47(2/3), 101–138 (2003)
Koutsoyannopoulos, Y.K., Papananos, Y.: Systematic analysis and modeling of integrated inductors and transformers in RFIC design. IEEE Trans. Circuits Syst. II 47(8), 699–713 (2000)
Pucel, R., Massè, D., Hartwig, C.: Losses in microstrip. IEEE Trans. Microw. Theory Tech. 16(6), 342–350 (1968)
Faraji-Dana, R., Chow, Y.: The current distribution and ac resistance of a microstrip structure, IEEE Trans. Microw. Theory Tech. 38(9), 1268–1277 (1990)
Bahl, I.J.: Lumped Elements for RF and Microwave Circuits. Artech House Publishers, Norwood (2003)
Niknejad, A.M., Meyer, R.G.: Design, Simulation and Applications of Inductors and Transformers for Si RF ICs. Kluwer Academic Publishers, Boston (2000)
Nguyen, N.M., Meyer, R.G.: Si IC-compatible inductors and LC passive filters. IEEE J. Solid-State Circuits 25(4), 1028–1031 (1990)
Nguyen, N.M., Meyer, R.G.: A Si bipolar monolithic RF bandpass amplifier. IEEE J. Solid State Circuits. 27(1), 123–127 (1992)
Nguyen, N.M., Meyer, R.G.: A 1.8-GHz monolithic LC voltage-controlled oscillator. IEEE J. Solid State Circuits. 27( 3) 444–450 (1992)
Chang, J.Y.C., Abidi, A.A., Gaitan, M.: Large suspended inductors on silicon and their use in a 2\(\mu \)m CMOS RF amplifier. IEEE Electron Dev. Lett. 14(5), 246–248 (1993)
Negus, K., Koupal, B., Wholey, J., Carter, K., Millicker, D., Snapp, C., Marion, N.: Highly-integrated transmitter rfic with monolithic narrowband tuning for digital cellular handsets. IEEE Int. Solid State Circuits Conf. Dig. Tech. Pap. 38–39 (1994)
Stetzler, T.D., Post, I.G., Havens, J.H., Koyama, M.: A 2.7-4.5 V single chip GSM transceiver RF integrated circuit. IEEE J. Solid-State Circuits 30(12), 1421–1429 (1995)
Marshall, C., Behbahani, F., Birth, W., Fotowai, A., Fuchs, T., Gaethke, R., Heimeri, E., Lee, S., Moore, P., Navid, S., Saur, E.: A 2.7 v gsm transceiver ics with on-chip filtering. IEEE Int. Solid State Circuits Conf. Dig. Tech. Pap. 148–149 (1995)
Ashby, K.B., Finley, W.C., Bastek, J.J., Moinian, S., Koullias, I.A.: High Q inductors for wireless applications in a complementary silicon bipolar process. In: Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Oct 1994
Soyuer, M., Burghartz, J.N., Jenkins, K.A., Ponnapalli, S., Ewen, J.F., Pence, W.E.: Multi-level monolithic inductors in silicon technology. Electron. Lett. 31(5), 359–360 (1995)
Burghartz, J.N., Soyuer, M., Jenkins, K.A.: Microwave inductors and capacitors in standard multilevel interconnect silicon technology. IEEE Trans. Microw. Theory Tech. 44(1), 100–104 (1996)
Wu, C.-H., Kuo, C.-Y., Liu, S.-I.: Selective metal parallel shunting inductor and its VCO application. IEEE Trans. on Circuits Syst. I: Regul. Pap. 52(9) 1811–1818 (2005)
Merrill, R.B., Lee, T.W., You, H., Rasmussen, R., Moberly, L.A., Optimization of high Q integrated inductors for multilevel metal CMOS. IEDM Tech. Dig. 983–986 (1995)
Burghartz, J.N., Soyuer, M., Jenkins, K.A., Hulvey, M.D.: High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier. IEDM Tech. Dig. 1015–1018 (1995)
Burghartz, J.N., Jenkins, K.A., Soyuer, M.: Multilevel-spiral inductors using VLSI interconnect technology. IEEE Electron Dev. Lett. 17(9) 428–430 (1996)
Zolfaghari, A., Chan, A., Razavi, B.: Stacked inductors and transformers in CMOS technology. IEEE J. Solid-State Circuits 36(4), 620–628 (2001)
Feng, H., Jelodin, G., Gong, K., Zhan, R., Wu, Q., Chen, C., Wang, A.: Super compact RFIC inductors in 0.18 \(\mu \)m CMOS with copper interconnects. IEEE MTT-S Int. Microwave Symp. Dig. 1, 553–556 (2002)
Tang, C.-C., Wu, C.-H., Liu, S.-I.: Miniature 3-D inductors in standard CMOS process. IEEE J. Solid-State Circuits 37(4), 471–480 (2002)
Yin, W.-Y., Xie, J.-Y., Kang, K., Shi, J., Mao, J.-F., Sun, X.-W.: Vertical topologies of miniature multispiral stacked inductors. IEEE Trans. Microw. Theory Tech. 56(2), 475–486 (2008)
Tsui, H.-Y., Lau, J.: An on-chip vertical solenoid inductor design for multigigahertz CMOS RFIC. IEEE Trans. Microw. Theory Tech. 53(6), 1883–1890 (2005)
Edelstein, D.C., Burghartz, J.N.: Spiral and solenoidal inductor structures on silicon using Cu-damascene interconnects. In: Proceedings of the IEEE International Interconnect Technology Conference, June 1998
Yue, C.P., Wong, S.S.: On-chip spiral inductors with patterned ground shields for Si-based RF IC’s. IEEE J. Solid-State Circuits 33(5), 743–752 (1998)
Yim, S.-M., Chen, T., Kenneth, K.O.: The effects of a ground shield on the characteristics and performance of spiral inductors. IEEE J. Solid-State Circuits 37(2), 237–244 (2002)
Cheung, T.S.D., Long, J.R., Vaed, K., Volant, R., Chinthakindi, A., Schnabel, C.M., Florkey, J., Stein, K.: Differentially shielded monolithic inductors. In: Proceedings of the IEEE Custom Integrated Circuits Conference, Sept 2003
Cheung, T.S.D., Long, J.R.: Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits. IEEE J. Solid-State Circuits 41(5), 1183–1200 (2006)
Craninckx, J., Steyaert, M.: A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors. IEEE J. Solid-State Circuits 32(5), 736–744 (1997)
Kuhn, W.B., Elshabini-Riad, A., Stephenson, F.W.: Centre-tapped spiral inductors for monolithic bandpass filters. Electron. Lett. 31(8), 625–626 (1995)
Danesh, M., Long, J.R.: Differentially driven symmetric microstrip inductors. IEEE Trans. Microw. Theory Tech. 50(1), 332–341 (2002)
Rabjohn, G.G.: Monolithic microwave transformers. Master’s thesis. Carleton Univ, Ottawa, ON, Canada (1991)
Wang, Y.-Y., Li, Z.-F.: Group-cross symmetrical inductor (GCSI): a new inductor structure with higher self-resonance frequency and Q factor. IEEE Trans. Magn. 42(6), 1681–1686 (2006)
Chen, W.-Z., Chen, W.-H.: Symmetric 3D passive components for RF ICs application. In: Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC), Symposium, pp. 599–602, June 2003
Kodali, S., Allstot, D.J.: A symmetric miniature 3D inductor. In: Proceedings of the International Symposium on Circuits and Systems, vol. 1, pp. I–92, May 2003
Yang, H.Y.D.: Design considerations of differential inductors in CMOS technology for RFIC. In: Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC), Symposium, pp. 449–452, June 2004
Lopez-Villegas, J.M., Samitier, J., Cane, C., Losantos, P., Bausells, J.: Improvement of the quality factor of RF integrated inductors by layout optimization. IEEE Trans. Microw. Theory Tech. 48(1), 76–83 (2000)
Niknejad, A.M., Meyer, R.G.: Design, simulation and applications of inductors and transformers for SI RF ICs. Kluwer Academic, Boston (2000)
Chi, C.-Y., Rebiez, G.M.: Planar microwave and millimeter-wave lumped elements andcoupled-line filters using micro-machining techniques. IEEE Trans. Microw. Theory Tech. 43(4), 730–738 (1995)
Ozgur, M., Zaghloul, M.E., Gaitan, M.: High Q backside micromachined CMOS inductors. In: Proceedings of the IEEE International Symposium on Circuits and Systems, vol 2, pp. 577–580, May 1999
Hongrui, J., Wang, Y., Yeh, J.-L.A., Tien, N.C.: On-chip spiral inductors suspended over deep copper-lined cavities. IEEE Trans. Microw. Theory Tech. 48(12) 2415–2423 (2000)
Lakdawala, H., Zhu, X., Luo, H., Santhanam, S., Carley, L.R., Fedder, G.K.: Micromachined high-Q inductors in a 0.18\(\mu \)m copper interconnect low-k dielectric CMOS process. IEEE J. Solid State Circuits 37(3) 394–403 (2002)
Hsieh, M.-C., Fang, Y.-K., Chen, C.-H., Chen, S.-M., Yeh, W.-K.: Design and fabrication of deep submicron CMOS technology compatible suspended high-Q spiral inductors. IEEE Trans. Electron Dev. 51(3), 324–331 (2004)
Ribas, R.P., Lescot, J., Leclercq, J.-L., Karam, J.M., Ndagijimana, F.: Micromachined microwave planar spiral inductors and transformers. IEEE Trans. Microw. Theory Tech. 48(8) 1326–1335 (2000)
Park, J.Y., Allen, M.G.: High Q spiral-type microinductors on silicon substrates. IEEE Trans. Magnetics 35(5) 3544–3546 (1999)
Ashby, K.B., Koullias, I.A., Finley, W.C., Bastek, J.J., Moinian, S.: High-Q inductors for wireless applications in a complementary silicon bipolar process. IEEE J. Solid State Circuits 31(1), 4–9 (1996)
Burghartz, J.N., Edelstein, D.C., Jenkins, K.A., Kwark, Y.H., Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates. IEEE Trans. Microw. Theory Tech. 45(10, Part 2) 1961–1968 (1997)
Okabe, H., Yamada, H., Yamasaki, M., Kagaya, O., Sekine, K., Yamashita, K.: Characterization of a planar spiral inductor on a composite-resin low-impedance substrate and its application to microwave circuits. IEEE Trans. Compon. Packag. Manuf. Technol. Part B 21(3) 269–273 (1998)
Kihong K., Kenneth, O.: Characteristics of an integrated spiral inductor with an underlying n-well. IEEE Trans. Electron Dev. 44(9) 1565–1567 (1997)
Choong-Mo, N., Young-Se, K.: High-performance planar inductor on thick oxidized porous silicon (OPS) substrate. IEEE Microw. Guided Wave Lett. 7(8) 236–238 (1997)
Lee, L.S., Chungpin, L., Liao, C., Lee, C.-L., Huang, T.-H., Tang, D.D.-L., Duh, T.S., Yang, T.-T.: Isolation on si wafers by MeV proton bombardment for RF integrated circuits. IEEE Trans. Electron Dev. 48(5), 928–934 (2001)
Long, J.R., Copeland, M.A.: The modeling, characterization, and design of monolithic inductors for silicon RF IC’s. IEEE J. Solid State Circuits 32(3), 357–369 (1997)
Andersen, R.B., Jorgensen, T., Laursen, S., Kolding, T.E.: EM-simulation of planar inductor performance for epitaxial silicon processes. Analog Integr. Circ. Sig. Process 30(1), 51–58 (2002)
Niknejad, A.M., Meyer, R.G.: Analysis, design, and optimization of spiral inductors and transformers for Si RF IC’s. IEEE J. Solid State Circuits 33(10), 1470–1481 (1998)
Hershenson, M.M., Mohan, S.S., Boyd, S.P., Lee, T.H.: Optimization of inductor circuits via geometric programming. In: Proceedings of the Design Automation Conference, June 1999
Duffin, R.J., Peterson, E.L., Zener, C.: Geometric programming-theory and application. Wiley, New York (1967)
Post, J.E.: Optimizing the design of spiral inductors on silicon. IEEE Trans. Circuits and Syst. II: Analog and Digital Signal Process. 47(1), 15–17 (2000)
Zhan, Y., Sapatnekar, S.S.: Optimization of integrated spiral inductors using sequential quadratic programming. In: Proceedings of the IEEE Design, Automation and Test in Europe Conference and Exhibition, vol 1, pp. 622–627, Feb 2004
Nieuwoudt A., Massoud, Y., Variability-aware multilevel integrated spiral inductor synthesis. IEEE Trans. Comput. Aided Design Integr. Circuits Syst. 25(12) 2613–2625 (2006)
Bhaduri, A., Vijay, V., Agarwal, A., Vemuri, R., Mukherjee, B., Wang, P., Pacelli, A.: Parasitic-aware synthesis of RF LNA circuits considering quasi-static extraction of inductors and interconnects. In: Proceedings of the 47th Midwest Symposium on Circuits and System, vol 1, pp. 477–480, July 2004
Mukherjee, S., Mutnury, B., Dalmia, S., Swaminathan, M.: Layoutlevel synthesis of RF inductors and filters in LCP substrates for Wi-Fi applications. IEEE Trans. Microw. Theory Tech. 53, 2196–2210 (2005)
Mandal, S.K., Sural, S., Patra, A.: ANN- and PSO-based synthesis of on-chip spiral inductors for RF ICs. IEEE Trans. Comput. Aided Design Integr. Circuits Syst. 27(1) 188–192 (2008)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2014 Springer India
About this chapter
Cite this chapter
Haobijam, G., Palathinkal, R.P. (2014). Introduction. In: Design and Analysis of Spiral Inductors. Springer, New Delhi. https://doi.org/10.1007/978-81-322-1515-8_1
Download citation
DOI: https://doi.org/10.1007/978-81-322-1515-8_1
Published:
Publisher Name: Springer, New Delhi
Print ISBN: 978-81-322-1514-1
Online ISBN: 978-81-322-1515-8
eBook Packages: EngineeringEngineering (R0)