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Laser Nano-Soldering of ZnO Nanowires and GaN Thin Film for Fabrication of Hetero p-n Junction

  • Tetsuya Shimogaki
  • Yuki Ishida
  • Kota Okazaki
  • Mitsuhiro Higashihata
  • Daisuke Nakamura
  • Tatsuo Okada
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 180)

Abstract

We have investigated the laser nano soldering between ZnO nanowires and the p-type GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires, and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to solder the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nanowires. As a result, the improvements of the IV characteristics of the junction and the increment of the UV electro-luminescence were clearly observed, demonstrating the effectiveness of the nano soldering in fabrication of the hetero p-n junction between the ZnO nanowires and the GaN thin film.

Keywords

Sapphire Substrate Small Bead Irradiation Fluence Relative Transmission Spectrum Pressure Laser Ablation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zuniga Perez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al-Suleiman, A. El-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, H.S. Kwack, J. Guinard, D. Le Si Gang, Nanotechnology 20, 332001 (2009)CrossRefGoogle Scholar
  2. 2.
    Y.W. Heo, D.P. Norton, L.C. Tien, Y. Kwon, B.S. Kang, F. Ren, S.J. Pearton, J.R. LaRoche, Mater. Sci. Eng. R47, 1 (2004)CrossRefGoogle Scholar
  3. 3.
    A.B. Hartanto, A. Ning, Y. Nakata, T. Okada, Appl. Phys. A78, 299 (2004)ADSCrossRefGoogle Scholar
  4. 4.
    R.Q. Guo, J. Nishimura, M. Ueda, M. Higashihata, D. Nakamura, T. Okada, Appl. Phys. A89, 141 (2007)ADSCrossRefGoogle Scholar
  5. 5.
    R.Q. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, J. Suehiro, T. Okada, Appl. Phys. A90, 539 (2008)ADSCrossRefGoogle Scholar
  6. 6.
    S.S. Lin, J.I. Hong, J.H. Song, Y. Zhu, H.P. He, Z. Xu, Y.G. Wei, Y. Ding, R.L. Snyder, Z.L. Wang, Nano Lett. 9, 3877 (2009)CrossRefGoogle Scholar
  7. 7.
    J.Y. Zhang, Q.F. Zhang, T.S. Deng, J.L. Wu, Appl. Phys. Lett. 95, 211107 (2009)ADSCrossRefGoogle Scholar
  8. 8.
    R.Q. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, T. Okada, Appl. Phys. B94, 33 (2009)ADSCrossRefGoogle Scholar
  9. 9.
    A.M.C. Ng, Y.Y. Xi, Y.F. Hsu, A.B. Djurisic, W.K. Chan, S. Gwo, H.L. Tam, K.W. Cheah, P.W.K. Fong, H.F. Lui, C. Surya, Nanotechnology 20, 445201 (2009)ADSCrossRefGoogle Scholar
  10. 10.
    A. Wadeasa, O. Nur, M. Willander, Nanotechnology 20, 065710 (2009)ADSCrossRefGoogle Scholar
  11. 11.
    R.Q. Guo, M. Matsumoto, T. Matsumoto, M. Higashihata, D. Nakamura, T. Okada, Appl. Surf. Sci. 255, 9671 (2009)ADSCrossRefGoogle Scholar

Copyright information

© Springer India 2014

Authors and Affiliations

  • Tetsuya Shimogaki
    • 1
  • Yuki Ishida
    • 1
  • Kota Okazaki
    • 1
  • Mitsuhiro Higashihata
    • 1
  • Daisuke Nakamura
    • 1
  • Tatsuo Okada
    • 1
  1. 1.Department of Electrical EngineeringKyushu UniversityFukuokaJapan

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