Abstract
The SDRAM requires the refreshing at every refresh time to maintain the data, and this operation consumes power. Because the power consumption of the processor is decreased, the power cosnumption on the SDRAM is taking large portion of the total power consumption. The refresh time can be expanded because the retention time and power consumption can be changed. In this paper we introduce the SDRAM controller which enables the analysis of the retention time for the power redectoin purpose.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Hamamoto T (1998) On the retention time distribution of dynamic random access memory (DRAM). Electron Devices 45(6):1300–1309
Lee SH, Hong SH, Oh JH, Choi YK, Bae DI, Park SH, Roh BH, Chung TY, Kim K (2003) Improvement of data retention time using DRAM cell with metallic shield embedded (MSE)-STI for 90 nm technology node and beyond. Eur Solid-State Device Res 151–154
Weber A, Birner A, Krautschneider W (2005) Data retention analysis on individual cells of 256 Mb DRAM in 110 nm technology. Solid-State Device Research Conference, pp 185–188
Cho MH, Shin C, Liu TJK (2009) Convex channel design for improved capacitorless DRAM Retention Time. Simul Semicond Process Devices 1–4
Liu J (2012) RAIDR: retention-aware intelligent DRAM refresh, Computer architecture (ISCA). International Symposium on Computer Architecture (ISCA), pp 1–12
Acknowledgments
This study was supported by Seoul National University of Science and Technology.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2013 Springer India
About this paper
Cite this paper
Kim, S.D., Jeong, Y.S., Lee, J.S., Lee, S.E. (2013). SDRAM Controller for Retention Time Analysis in Low Power Signal Processor. In: S, M., Kumar, S. (eds) Proceedings of the Fourth International Conference on Signal and Image Processing 2012 (ICSIP 2012). Lecture Notes in Electrical Engineering, vol 222. Springer, India. https://doi.org/10.1007/978-81-322-1000-9_29
Download citation
DOI: https://doi.org/10.1007/978-81-322-1000-9_29
Published:
Publisher Name: Springer, India
Print ISBN: 978-81-322-0999-7
Online ISBN: 978-81-322-1000-9
eBook Packages: EngineeringEngineering (R0)